1996
AUTHORSDavid Abusch-Magder , M. A. Kastner , C. L. Dennis , W. F. Dinatale , T. M. Lyszczarz , D. C. Shaver , P. M. Mankiewich
ABSTRACTWe have fabricated a Metal Oxide Silicon Single Electron Transistor (MOSSET), in which a small island of electrons is isolated by tunnel barriers. The charging energy of the island is 15meV, and the natural line width, which results from the coupling to the leads, is > 500 µeV. Tunneling spectra show that the typical excitation energy for a fixed number of electrons is ∼4meV. In the future, these devices will allow exploration of the regime in which the electrons on the island and in the leads interact coherently. More... »
PAGES251-260
Quantum Transport in Semiconductor Submicron Structures
ISBN
978-94-010-7287-8
978-94-009-1760-6
http://scigraph.springernature.com/pub.10.1007/978-94-009-1760-6_12
DOIhttp://dx.doi.org/10.1007/978-94-009-1760-6_12
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