Coulomb Blockade in a Silicon Mosset View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1996

AUTHORS

David Abusch-Magder , M. A. Kastner , C. L. Dennis , W. F. Dinatale , T. M. Lyszczarz , D. C. Shaver , P. M. Mankiewich

ABSTRACT

We have fabricated a Metal Oxide Silicon Single Electron Transistor (MOSSET), in which a small island of electrons is isolated by tunnel barriers. The charging energy of the island is 15meV, and the natural line width, which results from the coupling to the leads, is > 500 µeV. Tunneling spectra show that the typical excitation energy for a fixed number of electrons is ∼4meV. In the future, these devices will allow exploration of the regime in which the electrons on the island and in the leads interact coherently. More... »

PAGES

251-260

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-94-009-1760-6_12

DOI

http://dx.doi.org/10.1007/978-94-009-1760-6_12

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021492860


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