HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model for High-Voltage MOSFETs View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2010-02-25

AUTHORS

H. J. Mattausch , N. Sadachika , M. Yokomichi , M. Miyake , T. Kajiwara , Y. Oritsuki , T. Sakuda , H. Kikuchihara , U. Feldmann , M. Miura-Mattausch

ABSTRACT

The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS structure or the symmetric HVMOS structure and determine all electrical and thermal high-voltage MOSFET properties without relying on any form of macro modeling or sub-circuit formulation. Furthermore, HiSIM-HV’s consistent potential-based approach enables the reproduction of all structure-dependent scaling properties of high-voltage MOSFET features with a single global parameter set. The full scaling properties of HiSIM-HV with respect to the MOSFET-core geometry parameters of gate length and gate width as well as the drift-region parameters of drift-region length and drift-region doping are unique among the available compact high-voltage MOSFET models. Continuous development of HiSIM-HV is carried out in cooperation with the international semiconductor industry and improved versions of HiSIM-HV are released 2 times per year through the Compact Modeling Council (CMC). More... »

PAGES

33-64

Book

TITLE

POWER/HVMOS Devices Compact Modeling

ISBN

978-90-481-3045-0
978-90-481-3046-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-90-481-3046-7_2

DOI

http://dx.doi.org/10.1007/978-90-481-3046-7_2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002563234


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180 grid-institutes:grid.257022.0 schema:alternateName Hiroshima University, 1-3-1 Kagamiyama, 739-8530, Higashi-Hiroshima, Japan
181 schema:name Hiroshima University, 1-3-1 Kagamiyama, 739-8530, Higashi-Hiroshima, Japan
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