Ontology type: schema:Chapter
1998
AUTHORSF. Gámiz , J. A. López-Villanueva , J. B. Roldán , J. E. Carceller
ABSTRACTInversion layer mobility in extremely thin SOI MOSFETs with silicon film thickness down to 10 nm has been investigated. The Boltzmann transport equation has been solved by the Monte Carlo method. The mobility decrease appearing in devices with a silicon film thickness below 20nm is satisfactorily explained by the contribution of two scattering mechanisms: i) an increase in phonon scattering as a consequence of the greater confinement of the electrons in the thin silicon film, and ii) the increase in Coulomb scattering due to a greater number of interface traps in the buried Si-SiO2. More... »
PAGES113-116
Simulation of Semiconductor Processes and Devices 1998
ISBN
978-3-7091-7415-9
978-3-7091-6827-1
http://scigraph.springernature.com/pub.10.1007/978-3-7091-6827-1_31
DOIhttp://dx.doi.org/10.1007/978-3-7091-6827-1_31
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