Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1993

AUTHORS

S. Imanaga , K. Hane , Y. Hayafuji

ABSTRACT

This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (Id - Vd). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(Vg). We found that: (1) for Id –Vd characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated Isub-C Vg characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula Pii = P0((E - 1.12)/1.12)n with n of 7 and P0 of 2.8 × 1011s-1 was used as the formula for the impact ionization rate. More... »

PAGES

473-476

Book

TITLE

Simulation of Semiconductor Devices and Processes

ISBN

978-3-7091-7372-5
978-3-7091-6657-4

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-7091-6657-4_117

DOI

http://dx.doi.org/10.1007/978-3-7091-6657-4_117

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037464132


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/1103", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Clinical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/11", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Medical and Health Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Yokohama Technology Center, Sony Corporation, 134 Goudo, 240, Hodogaya, Yokohama, Kanagawa, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Imanaga", 
        "givenName": "S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Yokohama Technology Center, Sony Corporation, 134 Goudo, 240, Hodogaya, Yokohama, Kanagawa, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hane", 
        "givenName": "K.", 
        "id": "sg:person.013162255227.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013162255227.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Yokohama Technology Center, Sony Corporation, 134 Goudo, 240, Hodogaya, Yokohama, Kanagawa, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hayafuji", 
        "givenName": "Y.", 
        "id": "sg:person.014453315737.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014453315737.81"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-3697(75)90055-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032785453"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3697(75)90055-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032785453"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.332737", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057937093"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/t-ed.1983.21266", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061462980"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1993", 
    "datePublishedReg": "1993-01-01", 
    "description": "This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (Id - Vd). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(Vg). We found that: (1) for Id \u2013Vd characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated Isub-C Vg characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula Pii = P0((E - 1.12)/1.12)n with n of 7 and P0 of 2.8 \u00d7 1011s-1 was used as the formula for the impact ionization rate.", 
    "editor": [
      {
        "familyName": "Selberherr", 
        "givenName": "Siegfried", 
        "type": "Person"
      }, 
      {
        "familyName": "Stippel", 
        "givenName": "Hannes", 
        "type": "Person"
      }, 
      {
        "familyName": "Strasser", 
        "givenName": "Ernst", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/978-3-7091-6657-4_117", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": {
      "isbn": [
        "978-3-7091-7372-5", 
        "978-3-7091-6657-4"
      ], 
      "name": "Simulation of Semiconductor Devices and Processes", 
      "type": "Book"
    }, 
    "name": "Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics", 
    "pagination": "473-476", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1037464132"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/978-3-7091-6657-4_117"
        ]
      }, 
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "b276b28163c02f87afc804219f357b7e9c95a990e7ce046f01bc593f7bebb287"
        ]
      }
    ], 
    "publisher": {
      "location": "Vienna", 
      "name": "Springer Vienna", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/978-3-7091-6657-4_117", 
      "https://app.dimensions.ai/details/publication/pub.1037464132"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2019-04-16T09:29", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000372_0000000372/records_117118_00000002.jsonl", 
    "type": "Chapter", 
    "url": "https://link.springer.com/10.1007%2F978-3-7091-6657-4_117"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/978-3-7091-6657-4_117'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/978-3-7091-6657-4_117'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/978-3-7091-6657-4_117'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/978-3-7091-6657-4_117'


 

This table displays all metadata directly associated to this object as RDF triples.

97 TRIPLES      23 PREDICATES      30 URIs      20 LITERALS      8 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/978-3-7091-6657-4_117 schema:about anzsrc-for:11
2 anzsrc-for:1103
3 schema:author N7f6b695d19d94d50841d8b1b58e66c47
4 schema:citation https://doi.org/10.1016/0022-3697(75)90055-4
5 https://doi.org/10.1063/1.332737
6 https://doi.org/10.1109/t-ed.1983.21266
7 schema:datePublished 1993
8 schema:datePublishedReg 1993-01-01
9 schema:description This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (Id - Vd). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(Vg). We found that: (1) for Id –Vd characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated Isub-C Vg characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula Pii = P0((E - 1.12)/1.12)n with n of 7 and P0 of 2.8 × 1011s-1 was used as the formula for the impact ionization rate.
10 schema:editor N77b5265658be4802aaf54e8e07b10efa
11 schema:genre chapter
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N4caebbc877a744a99a958ac2441df7d3
15 schema:name Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics
16 schema:pagination 473-476
17 schema:productId N0228d106ed1a47ad8e153a6c7d13244e
18 N260562f9feba4342a7922884e15fd36e
19 N7ee21a94ac68445c9de9d991f3b2cd76
20 schema:publisher Ndb93e49756414f2dac7c93a11d920856
21 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037464132
22 https://doi.org/10.1007/978-3-7091-6657-4_117
23 schema:sdDatePublished 2019-04-16T09:29
24 schema:sdLicense https://scigraph.springernature.com/explorer/license/
25 schema:sdPublisher Ned50941204b1426cb532b888b66d8cbc
26 schema:url https://link.springer.com/10.1007%2F978-3-7091-6657-4_117
27 sgo:license sg:explorer/license/
28 sgo:sdDataset chapters
29 rdf:type schema:Chapter
30 N0228d106ed1a47ad8e153a6c7d13244e schema:name readcube_id
31 schema:value b276b28163c02f87afc804219f357b7e9c95a990e7ce046f01bc593f7bebb287
32 rdf:type schema:PropertyValue
33 N03ad285c64b9443396e6882c86929120 schema:familyName Selberherr
34 schema:givenName Siegfried
35 rdf:type schema:Person
36 N04cebec563dd4c9ba2370c3b2f5f4cf8 rdf:first N6e66a49ccc114b6bbc4d103953c1ce0c
37 rdf:rest rdf:nil
38 N212794f0c4ea4baa84fe665460cbb0c5 schema:familyName Stippel
39 schema:givenName Hannes
40 rdf:type schema:Person
41 N260562f9feba4342a7922884e15fd36e schema:name doi
42 schema:value 10.1007/978-3-7091-6657-4_117
43 rdf:type schema:PropertyValue
44 N4caebbc877a744a99a958ac2441df7d3 schema:isbn 978-3-7091-6657-4
45 978-3-7091-7372-5
46 schema:name Simulation of Semiconductor Devices and Processes
47 rdf:type schema:Book
48 N6e66a49ccc114b6bbc4d103953c1ce0c schema:familyName Strasser
49 schema:givenName Ernst
50 rdf:type schema:Person
51 N77b5265658be4802aaf54e8e07b10efa rdf:first N03ad285c64b9443396e6882c86929120
52 rdf:rest Nf5d0400e80b84b68b8c74dfe483e32bb
53 N7b18fbcdcdb240baa2cf0f01ce91f91d schema:affiliation https://www.grid.ac/institutes/grid.410792.9
54 schema:familyName Imanaga
55 schema:givenName S.
56 rdf:type schema:Person
57 N7ee21a94ac68445c9de9d991f3b2cd76 schema:name dimensions_id
58 schema:value pub.1037464132
59 rdf:type schema:PropertyValue
60 N7f6b695d19d94d50841d8b1b58e66c47 rdf:first N7b18fbcdcdb240baa2cf0f01ce91f91d
61 rdf:rest N889c9fee1aa045a49c88eedd1b450312
62 N889c9fee1aa045a49c88eedd1b450312 rdf:first sg:person.013162255227.81
63 rdf:rest Nd6e5b3bf972d40b4963f3341eda0b213
64 Nd6e5b3bf972d40b4963f3341eda0b213 rdf:first sg:person.014453315737.81
65 rdf:rest rdf:nil
66 Ndb93e49756414f2dac7c93a11d920856 schema:location Vienna
67 schema:name Springer Vienna
68 rdf:type schema:Organisation
69 Ned50941204b1426cb532b888b66d8cbc schema:name Springer Nature - SN SciGraph project
70 rdf:type schema:Organization
71 Nf5d0400e80b84b68b8c74dfe483e32bb rdf:first N212794f0c4ea4baa84fe665460cbb0c5
72 rdf:rest N04cebec563dd4c9ba2370c3b2f5f4cf8
73 anzsrc-for:11 schema:inDefinedTermSet anzsrc-for:
74 schema:name Medical and Health Sciences
75 rdf:type schema:DefinedTerm
76 anzsrc-for:1103 schema:inDefinedTermSet anzsrc-for:
77 schema:name Clinical Sciences
78 rdf:type schema:DefinedTerm
79 sg:person.013162255227.81 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
80 schema:familyName Hane
81 schema:givenName K.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013162255227.81
83 rdf:type schema:Person
84 sg:person.014453315737.81 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
85 schema:familyName Hayafuji
86 schema:givenName Y.
87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014453315737.81
88 rdf:type schema:Person
89 https://doi.org/10.1016/0022-3697(75)90055-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032785453
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1063/1.332737 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057937093
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1109/t-ed.1983.21266 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061462980
94 rdf:type schema:CreativeWork
95 https://www.grid.ac/institutes/grid.410792.9 schema:alternateName Sony (Japan)
96 schema:name Yokohama Technology Center, Sony Corporation, 134 Goudo, 240, Hodogaya, Yokohama, Kanagawa, Japan
97 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...