Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices View Full Text


Ontology type: schema:Chapter      Open Access: True


Chapter Info

DATE

1995

AUTHORS

A. Palma , J. A. Jiménez-Tejada , A. Godoy , J. E. Carceller

ABSTRACT

This work provides a direct way to include multiphonon capture at deep levels in the simulation of electron transport by the Monte Carlo method. This has been possible by adding the capture probability as one more scattering probability together with lattice mechanisms. To check this probability, numerical capture cross sections for deep centers in Si and GaAs obtained by our method have been fitted with experimental measurements. More... »

PAGES

380-383

Book

TITLE

Simulation of Semiconductor Devices and Processes

ISBN

978-3-7091-7363-3
978-3-7091-6619-2

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-7091-6619-2_92

DOI

http://dx.doi.org/10.1007/978-3-7091-6619-2_92

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020608250


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