Ontology type: schema:Chapter Open Access: True
1995
AUTHORSA. Palma , J. A. Jiménez-Tejada , A. Godoy , J. E. Carceller
ABSTRACTThis work provides a direct way to include multiphonon capture at deep levels in the simulation of electron transport by the Monte Carlo method. This has been possible by adding the capture probability as one more scattering probability together with lattice mechanisms. To check this probability, numerical capture cross sections for deep centers in Si and GaAs obtained by our method have been fitted with experimental measurements. More... »
PAGES380-383
Simulation of Semiconductor Devices and Processes
ISBN
978-3-7091-7363-3
978-3-7091-6619-2
http://scigraph.springernature.com/pub.10.1007/978-3-7091-6619-2_92
DOIhttp://dx.doi.org/10.1007/978-3-7091-6619-2_92
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