Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis View Full Text


Ontology type: schema:Chapter      Open Access: True


Chapter Info

DATE

2004

AUTHORS

N. Sadachika , Y. Uetsuji , D. Kitamaru , H. J. Mattausch , M. Miura-Mattausch , L. Weiss , U. Feldmann , S. Baba

ABSTRACT

We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I—V, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement of the silicon layer, results in enhanced 1/f noise in comparison with the bulk-MOSFET. Our results show that further reduction of the silicon-layer thickness for achieving higher driving capability will cause unavoidable enhancement of the noise. More... »

PAGES

255-258

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-7091-0624-2_59

DOI

http://dx.doi.org/10.1007/978-3-7091-0624-2_59

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045576521


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/08", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Information and Computing Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0801", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Artificial Intelligence and Image Processing", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
          "id": "http://www.grid.ac/institutes/grid.257022.0", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sadachika", 
        "givenName": "N.", 
        "id": "sg:person.07701264357.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07701264357.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
          "id": "http://www.grid.ac/institutes/grid.257022.0", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Uetsuji", 
        "givenName": "Y.", 
        "id": "sg:person.011071731341.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011071731341.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
          "id": "http://www.grid.ac/institutes/grid.257022.0", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kitamaru", 
        "givenName": "D.", 
        "id": "sg:person.015404461141.41", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015404461141.41"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
          "id": "http://www.grid.ac/institutes/grid.257022.0", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mattausch", 
        "givenName": "H. J.", 
        "id": "sg:person.015127051677.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015127051677.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
          "id": "http://www.grid.ac/institutes/grid.257022.0", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Miura-Mattausch", 
        "givenName": "M.", 
        "id": "sg:person.015610203677.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015610203677.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Infineon Technologies, D-8154, Munich, Germany", 
          "id": "http://www.grid.ac/institutes/grid.410337.2", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
            "Infineon Technologies, D-8154, Munich, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Weiss", 
        "givenName": "L.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Infineon Technologies, D-8154, Munich, Germany", 
          "id": "http://www.grid.ac/institutes/grid.410337.2", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
            "Infineon Technologies, D-8154, Munich, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Feldmann", 
        "givenName": "U.", 
        "id": "sg:person.010662756515.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010662756515.87"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Oki Electric Industry, 193-8550, Hachiouji, Tokyo, Japan", 
          "id": "http://www.grid.ac/institutes/grid.471232.1", 
          "name": [
            "Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan", 
            "Oki Electric Industry, 193-8550, Hachiouji, Tokyo, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Baba", 
        "givenName": "S.", 
        "id": "sg:person.013033032150.26", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013033032150.26"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2004", 
    "datePublishedReg": "2004-01-01", 
    "description": "We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I\u2014V, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement of the silicon layer, results in enhanced 1/f noise in comparison with the bulk-MOSFET. Our results show that further reduction of the silicon-layer thickness for achieving higher driving capability will cause unavoidable enhancement of the noise.", 
    "editor": [
      {
        "familyName": "Wachutka", 
        "givenName": "Gerhard", 
        "type": "Person"
      }, 
      {
        "familyName": "Schrag", 
        "givenName": "Gabriele", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/978-3-7091-0624-2_59", 
    "isAccessibleForFree": true, 
    "isPartOf": {
      "isbn": [
        "978-3-7091-7212-4", 
        "978-3-7091-0624-2"
      ], 
      "name": "Simulation of Semiconductor Processes and Devices 2004", 
      "type": "Book"
    }, 
    "keywords": [
      "f noise analysis", 
      "circuit simulation", 
      "silicon layer thickness", 
      "noise analysis", 
      "SOI MOSFET model", 
      "carrier concentration increases", 
      "silicon layer", 
      "SOI surface", 
      "bulk MOSFETs", 
      "carrier concentration", 
      "f noise", 
      "unavoidable enhancement", 
      "potential distribution", 
      "simulations", 
      "concentration increases", 
      "HiSIM", 
      "noise", 
      "SOI", 
      "further reduction", 
      "thickness", 
      "layer", 
      "confinement", 
      "capability", 
      "distribution", 
      "model", 
      "applications", 
      "results", 
      "enhancement", 
      "comparison", 
      "channels", 
      "analysis", 
      "reduction", 
      "increase", 
      "concentration"
    ], 
    "name": "Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis", 
    "pagination": "255-258", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1045576521"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/978-3-7091-0624-2_59"
        ]
      }
    ], 
    "publisher": {
      "name": "Springer Nature", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/978-3-7091-0624-2_59", 
      "https://app.dimensions.ai/details/publication/pub.1045576521"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2022-09-02T16:16", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/chapter/chapter_381.jsonl", 
    "type": "Chapter", 
    "url": "https://doi.org/10.1007/978-3-7091-0624-2_59"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

154 TRIPLES      22 PREDICATES      59 URIs      52 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/978-3-7091-0624-2_59 schema:about anzsrc-for:08
2 anzsrc-for:0801
3 schema:author Nd7b792f00abe4c6e968fb195d1e50409
4 schema:datePublished 2004
5 schema:datePublishedReg 2004-01-01
6 schema:description We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I—V, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement of the silicon layer, results in enhanced 1/f noise in comparison with the bulk-MOSFET. Our results show that further reduction of the silicon-layer thickness for achieving higher driving capability will cause unavoidable enhancement of the noise.
7 schema:editor N7bc0e49fbfce4326927613581547b5c0
8 schema:genre chapter
9 schema:isAccessibleForFree true
10 schema:isPartOf Ne8dce00e1c9b4da3b438f6e85049adda
11 schema:keywords HiSIM
12 SOI
13 SOI MOSFET model
14 SOI surface
15 analysis
16 applications
17 bulk MOSFETs
18 capability
19 carrier concentration
20 carrier concentration increases
21 channels
22 circuit simulation
23 comparison
24 concentration
25 concentration increases
26 confinement
27 distribution
28 enhancement
29 f noise
30 f noise analysis
31 further reduction
32 increase
33 layer
34 model
35 noise
36 noise analysis
37 potential distribution
38 reduction
39 results
40 silicon layer
41 silicon layer thickness
42 simulations
43 thickness
44 unavoidable enhancement
45 schema:name Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis
46 schema:pagination 255-258
47 schema:productId N33ccb3bf3ca34e89a7f14fe69a5cce31
48 N576f0837697841fabd832816d9cc0d62
49 schema:publisher N3c46aeb4677b4a7cbaa3096df76eabe2
50 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045576521
51 https://doi.org/10.1007/978-3-7091-0624-2_59
52 schema:sdDatePublished 2022-09-02T16:16
53 schema:sdLicense https://scigraph.springernature.com/explorer/license/
54 schema:sdPublisher Nb06eb8a150884400ade26604c89436df
55 schema:url https://doi.org/10.1007/978-3-7091-0624-2_59
56 sgo:license sg:explorer/license/
57 sgo:sdDataset chapters
58 rdf:type schema:Chapter
59 N23139e347d434d00b04dc9b9b2cf4a0f schema:familyName Wachutka
60 schema:givenName Gerhard
61 rdf:type schema:Person
62 N2d1cbc70b4ea42a581a5e3e85e771a97 rdf:first Nd71ac0cb89334254b7e1988db8e2a781
63 rdf:rest Nea31ff864cac4638b59380b9732eff41
64 N33ccb3bf3ca34e89a7f14fe69a5cce31 schema:name dimensions_id
65 schema:value pub.1045576521
66 rdf:type schema:PropertyValue
67 N3c46aeb4677b4a7cbaa3096df76eabe2 schema:name Springer Nature
68 rdf:type schema:Organisation
69 N4e9689cec80846939d15ca265de344aa rdf:first sg:person.015610203677.04
70 rdf:rest N2d1cbc70b4ea42a581a5e3e85e771a97
71 N5228ed7a9cb94a2cb318ca180e62fa64 rdf:first sg:person.011071731341.23
72 rdf:rest Na53ce216e66d42409999b8ded5c5ed74
73 N576f0837697841fabd832816d9cc0d62 schema:name doi
74 schema:value 10.1007/978-3-7091-0624-2_59
75 rdf:type schema:PropertyValue
76 N7bc0e49fbfce4326927613581547b5c0 rdf:first N23139e347d434d00b04dc9b9b2cf4a0f
77 rdf:rest Nbc0e3ca1ba0f4a4e95aad123547160bd
78 Na53ce216e66d42409999b8ded5c5ed74 rdf:first sg:person.015404461141.41
79 rdf:rest Naacf58c220ce49788fa93e92fb467dac
80 Naacf58c220ce49788fa93e92fb467dac rdf:first sg:person.015127051677.04
81 rdf:rest N4e9689cec80846939d15ca265de344aa
82 Nb06eb8a150884400ade26604c89436df schema:name Springer Nature - SN SciGraph project
83 rdf:type schema:Organization
84 Nbc0e3ca1ba0f4a4e95aad123547160bd rdf:first Neeff2eb8c62f4f38b798ddacb695dd0f
85 rdf:rest rdf:nil
86 Nd71ac0cb89334254b7e1988db8e2a781 schema:affiliation grid-institutes:grid.410337.2
87 schema:familyName Weiss
88 schema:givenName L.
89 rdf:type schema:Person
90 Nd7b792f00abe4c6e968fb195d1e50409 rdf:first sg:person.07701264357.35
91 rdf:rest N5228ed7a9cb94a2cb318ca180e62fa64
92 Ne841975099a84280ae1cf1c234da087b rdf:first sg:person.013033032150.26
93 rdf:rest rdf:nil
94 Ne8dce00e1c9b4da3b438f6e85049adda schema:isbn 978-3-7091-0624-2
95 978-3-7091-7212-4
96 schema:name Simulation of Semiconductor Processes and Devices 2004
97 rdf:type schema:Book
98 Nea31ff864cac4638b59380b9732eff41 rdf:first sg:person.010662756515.87
99 rdf:rest Ne841975099a84280ae1cf1c234da087b
100 Neeff2eb8c62f4f38b798ddacb695dd0f schema:familyName Schrag
101 schema:givenName Gabriele
102 rdf:type schema:Person
103 anzsrc-for:08 schema:inDefinedTermSet anzsrc-for:
104 schema:name Information and Computing Sciences
105 rdf:type schema:DefinedTerm
106 anzsrc-for:0801 schema:inDefinedTermSet anzsrc-for:
107 schema:name Artificial Intelligence and Image Processing
108 rdf:type schema:DefinedTerm
109 sg:person.010662756515.87 schema:affiliation grid-institutes:grid.410337.2
110 schema:familyName Feldmann
111 schema:givenName U.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010662756515.87
113 rdf:type schema:Person
114 sg:person.011071731341.23 schema:affiliation grid-institutes:grid.257022.0
115 schema:familyName Uetsuji
116 schema:givenName Y.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011071731341.23
118 rdf:type schema:Person
119 sg:person.013033032150.26 schema:affiliation grid-institutes:grid.471232.1
120 schema:familyName Baba
121 schema:givenName S.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013033032150.26
123 rdf:type schema:Person
124 sg:person.015127051677.04 schema:affiliation grid-institutes:grid.257022.0
125 schema:familyName Mattausch
126 schema:givenName H. J.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015127051677.04
128 rdf:type schema:Person
129 sg:person.015404461141.41 schema:affiliation grid-institutes:grid.257022.0
130 schema:familyName Kitamaru
131 schema:givenName D.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015404461141.41
133 rdf:type schema:Person
134 sg:person.015610203677.04 schema:affiliation grid-institutes:grid.257022.0
135 schema:familyName Miura-Mattausch
136 schema:givenName M.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015610203677.04
138 rdf:type schema:Person
139 sg:person.07701264357.35 schema:affiliation grid-institutes:grid.257022.0
140 schema:familyName Sadachika
141 schema:givenName N.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07701264357.35
143 rdf:type schema:Person
144 grid-institutes:grid.257022.0 schema:alternateName Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan
145 schema:name Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan
146 rdf:type schema:Organization
147 grid-institutes:grid.410337.2 schema:alternateName Infineon Technologies, D-8154, Munich, Germany
148 schema:name Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan
149 Infineon Technologies, D-8154, Munich, Germany
150 rdf:type schema:Organization
151 grid-institutes:grid.471232.1 schema:alternateName Oki Electric Industry, 193-8550, Hachiouji, Tokyo, Japan
152 schema:name Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1, Kagamiyama, Higashi-Hiroshima, 739-8530, Hiroshima, Japan
153 Oki Electric Industry, 193-8550, Hachiouji, Tokyo, Japan
154 rdf:type schema:Organization
 




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