Mechanism of Reconstruction of Si(100) Surfaces View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1992

AUTHORS

M. Tsukada , N. Shima , Z. Zhu , K. Kobayashi , H. Kageshima , N. Isshiki

ABSTRACT

Electronic structures of Si(100) buckled 2×1, p(2×2) and c(4×2) surfaces are revealed by first-principles LDA calculation. The c(4×2) surface is found to be the most stable structure. The mechanism of the stabilization for this surface is different from the electrostatic dipole-dipole interaction of the asymmetric dimers. The dispersion of the surface band compares fairly well with the ARUPS observation. The theoretical simulations of STM image for Si(100) surface is described. More... »

PAGES

145-152

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-84482-9_17

DOI

http://dx.doi.org/10.1007/978-3-642-84482-9_17

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043158431


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