Characterization of Reactive Intermediates in Silicon Etching and Deposition Using Laser Techniques View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1984

AUTHORS

S. A. Joyce , B. Roop , J. C. Schultz , K. Suzuki , J. Thoman , J. I. Steinfeld

ABSTRACT

Plasma reactive etching and chemical vapor deposition (CVD) are widely used techniques in the fabrication of semiconductor microelectronic devices. Both processes are complex and difficult to characterize because of the large number of reactive components which may be present; in addition, the field gradients present in plasmas and the temperature gradients present in CVD reactors must be considered in any general model of these processes. The use of optical probes for plasma [1,2] and CVD [1,3] processes has begun to provide important information on the elementary reactions taking place in these systems. The high sensitivity and time and energy resolution afforded by laser spectroscopic techniques, in particular, have been extremely valuable for this purpose. More... »

PAGES

221-224

Book

TITLE

Laser Processing and Diagnostics

ISBN

978-3-642-82383-1
978-3-642-82381-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-82381-7_29

DOI

http://dx.doi.org/10.1007/978-3-642-82381-7_29

DIMENSIONS

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