Fabrication and Properties of Ultra Small Si Wire Arrays by Vapor-Liquid-Solid Growth with Circuits View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2001

AUTHORS

Takeshi Kawano , Yoshiko Kato , Masato Futagawa , Hidekuni Takao , Kazuaki Sawada , Makoto Ishida

ABSTRACT

Penetrating micro-Si wire probe arrays with on-chip circuits have been developed using selective Vapor-Liquid-Solid (VLS) growth method for application to multipoint recording of neural activity potentials. The Si wire probes with 160 µm in length and 3.5 µm in diameter at tip were grown at predetermined positions for growth time of 2 hours at 700 °C. Resistivity of the Si wire probe grown by Au-Si2H6 VLS was 104 Ω·cm without impurity doping process. To achieve low impedance of Si wire probes for recording of neural potential levels, phosphorous thermal diffusion to Si wire probes was carried out. After diffusion at 1100 °C, Si wire probes showed resistivity of 10−2 Ω·cm, and the value is low enough to use the Si wire probe for applications to neuroscience field. More... »

PAGES

1038-1041

Book

TITLE

Transducers ’01 Eurosensors XV

ISBN

978-3-540-42150-4
978-3-642-59497-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-59497-7_245

DOI

http://dx.doi.org/10.1007/978-3-642-59497-7_245

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023910152


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