Single Crystalline Silicon Nano Wire Piezoresistors for Mechanical Sensors View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2001

AUTHORS

Toshiyuki Toriyama , Yasutada Tanimoto , Susumu Sugiyama

ABSTRACT

A Si nano wire piezoresistor, whose minimum cross sectional area is 53nm × 53nm, was fabricated by combination of thermal diffusion, electron beam (EB) direct writing and RIE. Maximum value of longitudinal piezoresistive coefficient πl[011] of the Si nano wire piezoresistor is found to be 48 × 10−5 (1/MPa) at impurity concentration of 5×1019 (cm−3). Longitudinal piezoresistive coefficient πl[011] of the Si nano wire piezoresistor enhanced up to 50% with a decrease in the cross sectional area, while transverse piezoresistive coefficient πl[011] decreased with a decrease in the cross sectional area. More... »

PAGES

974-977

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-59497-7_230

DOI

http://dx.doi.org/10.1007/978-3-642-59497-7_230

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018694731


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