Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2003

AUTHORS

W. Volksen , C. J. Hawker , J. L. Hedrick , V. Lee , T. Magbitang , M. Toney , R. D. Miller , E. Huang , J. Liu , K. G. Lynn , M. Petkov , K. Rodbell , M. H. Weber

ABSTRACT

Dense alkyl-functionalized organosilicates have dielectric constants that are 25-30% lower than silica, which allows ultralow dielectric targets(κ< 2.2) to be achieved at reduced porosity levels relative to those required for silica. Partially condensed silsesquioxane derivatives (RSiO1.5),, generate highly crosslinked organosilicate films upon thermal and/or radiation curing. We have demonstrated that porous methyl silsesquioxane (MSSQ) thin films can be generated utilizing a sacrificial macromolecular porogen approach and a number of effective porogen classes have been identified. A key feature in this process is the compatibility of the porogen and the matrix polymer at low levels of vitrification. This allows the formation of nanoscopic domains of porogen in the vitrifying matrix prior to the removal of the porogen to generate the porosity. This is achieved through judicious selection of porogen and matrix prepolymer molecular weights as well as by control of porogen functionality, end groups, and macromolecular architecture. Optimization of structural and processing parameters allow the film dielectric constant to be varied continuously from 2.8-1.4 simply by changing the porosity level of the matrix. Although closed-cell structures are achieved for loading levels below 30%, subsequent percolation and interconnection at higher loading levels still result in nanoscopic pore diameters (< 500 Å). More... »

PAGES

167-202

References to SciGraph publications

Book

TITLE

Low Dielectric Constant Materials for IC Applications

ISBN

978-3-642-63221-1
978-3-642-55908-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-55908-2_6

DOI

http://dx.doi.org/10.1007/978-3-642-55908-2_6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011275484


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