Frequency Changes in the Second Derivative of Currant — Voltage Characteristics of SnO2-Si the Heterostructures During Gas Adsorption for Different ... View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2004

AUTHORS

V. V. Il’chenko , A. I. Kravchenko , V. M. Telega , V. P. Chehun , L. G. Il’chenko , A. M. Gaskov , V. T. Grinchenko

ABSTRACT

Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the heterostructures show non-linear current - voltage characteristics. These structures, based on the industrially developed silicon technology, promise the new remarkable capabilities for the creation of the gas- and biosensitive sensors. More... »

PAGES

85-86

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-642-18727-8_12

DOI

http://dx.doi.org/10.1007/978-3-642-18727-8_12

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027135755


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