Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2008

AUTHORS

P. Favia , D. Klenov , G. Eneman , P. Verheyen , M. Bauer , D. Weeks , S. G. Thomas , H. Bender

ABSTRACT

Strain is introduced in the fabrication of complementary metal-oxide-semiconductor devices to enhance their channel region carrier mobility [1]. Epitaxial Si1−xGex (15–30at% Ge) or Si1−xCx (1–2at% C) are typical stressor materials. As Ge has a 4% larger lattice constant (0.566 nm) than Si (0.543 nm), Si1−xGex deposited in the source/drain (S/D) regions will induce compressive strain in the Si channel, while Si1−xCx in the S/D will induce tensile strain in the channel [2]. More... »

PAGES

15-16

Book

TITLE

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany

ISBN

978-3-540-85225-4
978-3-540-85226-1

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-540-85226-1_8

DOI

http://dx.doi.org/10.1007/978-3-540-85226-1_8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049743526


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