Tomographic analysis of a FinFET structure View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2008

AUTHORS

O. Richard , P. Van Marcke , H. Bender

ABSTRACT

In order to meet the International Technological Roadmap for Semiconductor (ITRS) goals [1] for the 32nm node and beyond new structures as the multiple-gate Silicon on insulator MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with good short channel characteristics and high drive current are introduced [2]. One of the considered configurations is the FinFET (Fin Field Effect Transistor) structure consisting of single crystalline silicon fins with the gate line crossing in the orthogonal direction (Figure 1). Because the typical dimensions of these structures are smaller than the thickness of the TEM specimen, the overlap of different materials along the electron beam direction renders the interpretation of the conventional TEM images (Figure 2) difficult. Tomographic 3D reconstruction from high angular annular dark field scanning (HAADFS) TEM image series can overcome this problem, and is therefore likely the most suited technique in order to characterize such devices. More... »

PAGES

35-36

Book

TITLE

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany

ISBN

978-3-540-85225-4
978-3-540-85226-1

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-540-85226-1_18

DOI

http://dx.doi.org/10.1007/978-3-540-85226-1_18

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009707371


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