Electronic Structure of GaNxAs1−x Under Pressure View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2008

AUTHORS

I. Gorczyca , P. Boguslawski , A. Svane , N. E. Christensen

ABSTRACT

The electronic band structures of GaN x As1−x alloys are examined within the density functional theory. The calculations, including structural optimizations, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, x, are examined. The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interaction with the lowest conduction bands induce a pronounced nonparabolicity of this band and affect strongly the value of the effective electron mass and its pressure and composition dependences. The origin of the additional E + optical transition is elucidated. More... »

PAGES

91-121

Book

TITLE

Dilute III-V Nitride Semiconductors and Material Systems

ISBN

978-3-540-74528-0
978-3-540-74529-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-540-74529-7_4

DOI

http://dx.doi.org/10.1007/978-3-540-74529-7_4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031910098


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