Strains and Stresses in GaN Heteroepitaxy -- Sources and Control View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2004

AUTHORS

A. Dadgar , R. Clos , G. Strassburger , F. Schulze , P. Veit , T. Hempel , J. Bläsing , A. Krtschil , I. Daumiller , M. Kunze , A. Kaluza , A. Modlich , M. Kamp , A. Diez , J. Christen , A. Krost

ABSTRACT

We present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correlated to the different layers and doping in simple and device structures. We show several solutions for strain reduction and control. High-quality devices grown on Si are demonstrated. More... »

PAGES

313-326

Book

TITLE

Advances in Solid State Physics 44

ISBN

978-3-540-21148-8
978-3-540-39970-4

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-3-540-39970-4_24

DOI

http://dx.doi.org/10.1007/978-3-540-39970-4_24

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044982505


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