Ontology type: schema:Chapter
2004
AUTHORSA. Dadgar , R. Clos , G. Strassburger , F. Schulze , P. Veit , T. Hempel , J. Bläsing , A. Krtschil , I. Daumiller , M. Kunze , A. Kaluza , A. Modlich , M. Kamp , A. Diez , J. Christen , A. Krost
ABSTRACTWe present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correlated to the different layers and doping in simple and device structures. We show several solutions for strain reduction and control. High-quality devices grown on Si are demonstrated. More... »
PAGES313-326
Advances in Solid State Physics 44
ISBN
978-3-540-21148-8
978-3-540-39970-4
http://scigraph.springernature.com/pub.10.1007/978-3-540-39970-4_24
DOIhttp://dx.doi.org/10.1007/978-3-540-39970-4_24
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