Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1989

AUTHORS

J. Thibault-Desseaux , J. L. Putaux , H. O. K. Kirchner

ABSTRACT

The increasing trend towards miniaturization and large scale integration of semiconductor devices has posed the challenge of producing materials which not only meet certain electronic specifications but also fulfil sometimes rather particular mechanical constraints. This implies that lattice defects created during production and materials processing of the devices have to be known and controlled. Only a microscopic and even nanoscopic knowledge of the defect structure allows the necessary stringent control of the over-all properties. More... »

PAGES

153-164

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4684-5709-4_11

DOI

http://dx.doi.org/10.1007/978-1-4684-5709-4_11

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005611598


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