Ion Beam Analysis of Aluminium Profiles in Hetero-Epitaxial Ga1-xAlxAs-Layers View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1976

AUTHORS

P. Bayerl , W. Pabst , P. Eichinger

ABSTRACT

RUTHERFORD-backscattering, ion-induced X-rays and nuc-lear reaction techniques were used to measure aluminium profiles in GaAlAs. While backscattering is mainly useful to give information about profiles near the surface with a sensitivity of about 5 percent of aluminium and a depth resolution of about 360 Å at 0.3 µm depth, and X-rays give the mean concentration in the surface layer, the 27Al(p,r)28 Si reaction is generally more applicable for deeper multilayer structures. The sensitivity is a few percent of aluminium and the depth resolution is limited by energy straggling to about 0.2 µm at 2 µm depth. For profiles extending over more than 3 µm corrections must be made due to the presence of other nuclear resonances at energies different than 0.992 MeV; the resonance curve is deduced from the thick target yield. Aluminium profiles are shown for single layers and a multilayer heterolaser structure. More... »

PAGES

363-373

Book

TITLE

Ion Beam Surface Layer Analysis

ISBN

978-1-4615-8878-8
978-1-4615-8876-4

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-8876-4_31

DOI

http://dx.doi.org/10.1007/978-1-4615-8876-4_31

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020742232


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