Inelastic Scattering and Spin-Orbit Scattering in 2D Systems Of GaAs/AlGaAs Heterostructures View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

S. Kawaji , K. Kuboki , H. Shigeno , T. Nambu , J. Wakabayashi , J. Yoshino , H. Sakaki

ABSTRACT

Recent development in understanding of the Anderson localization in the weakly localized regime has shown that one of the most interesting phenomena is the anomalous magnetoresistance which appears in the quantum correction terms in the conductivity [I]. Results of analysis of the negative magnetoresistance in the two-dimensional (2D) system in Si-MOSFETs have made clear some important properties of the localization and interaction in many valley systems [2], The 2D system in GaAs/AlxGa1-xAs heterostructures is the best material to test theoretical results by the reasons: (1) The systems is free from the intervalley scattering effect. (2)The spin Zeeman effect is small in the present system due to the small g-factor of the conduction electrons. However, as reported by our former paper [3], the experimental negative magnetoresistance results cannot be reproduced by Hikami, Larkin and Nagaoka’s theory [4] except at low field region (B < 0.002 T). At higher field region, their theory gives larger values in the magnetoconductivity than the experimental data. The discrepancy cannot be explained by the interaction effect which is very small as shown by Fukuyama et al’s theory [5]. Quite recently, Kawabata [6] has developed a theory of negative magnetoresistance which is applicable up to magnetic field much higher than Hikami et al’s theory. More... »

PAGES

413-416

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_91

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_91

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026462359


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