Temperature Dependence of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures View Full Text


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Chapter Info

DATE

1985

AUTHORS

J. Wakabayashi , S. Kawaji , J. Yoshino , H. Sakaki

ABSTRACT

The fractional quantum Hall effect (QHE) in GaAs/AlGaAs heterostructures reported first by Tsui, Störmer and Gossard[1] is one of the most attractive topics in two-dimensional electron systems. The phenomenon is characterized by a formation of the plateaus in the Hall resistivity ρxy regi and concurrent vanishing of the diagonal resistivity ρxx in a finite region of the electron density NS or the magnetic field B, where the filling factor υ becomes a fraction p/q; p=l, 2, 3, ... and q=3, 5, 7.[2,3] The filling factor υ is defined by υ =Nsh/eB, where eB/h is the degeneracy of a Landau level. The 1/3 and 2/3 effect, among others, are outstanding in a formation of the plateau of ρxy and vanishing of ρxx. Theoretical studies[4–8] have shown that the phenomenon is associated with the formation of a new liquid-like electronic state arising from the strong Coulomb interaction of the electrons. Experimentally, crude estimate of energy gaps in the quasiparticle excitation at υ = 1/3 and 2/3 was made by Tsui et al.[9] Recently, Chang et al[10] made a systematic experiment on temperature dependence of ρxx and ρxy around υ = 2/3 at low temperatures. More... »

PAGES

283-286

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_60

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_60

DIMENSIONS

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