Dissipation Processes in Semiconductors During Irradiation with Femtosecond Pulses View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

D. Hulin , M. Combescot , J. Bok , A. Migus , A. Antonetti , J. Y. Vinet

ABSTRACT

We study the dissipation processes in very dense electron-hole plasma created by a 100 femtosecond laser pulse in silicon and germanium. Several experiments have recently been reported using femtosecond pulses to create a high density electron-hole (e-h) plasma in silicon and study its tim.e evolution [1,2], or to determine the total amount of energy transferred to the silicon from the incident beam [3]. The femtosecond light pulse is a very unique tool to study the conversion of photons into electronic excitations since all the other characteristic times: e-h recombination, plasma expansion, electron-phonon interaction, lattice heating and atomic motion are larger. The use of such intense and short pulses raises the possibility of reaching e-h densities high enough to break so many covalent bonds that the melting temperature of the crystal can be lowered [4,5] significantly. The understanding of the exact nature of the melting induced by very short pulses relies on a good knowledge of the energy transfer from the laser pulse to the sample. More... »

PAGES

1275-1279

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_289

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_289

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016755204


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