Study of Neutron Transmutation Doping in a-Si:H View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

H. Hamanaka , K. Kuriyama , M. Yahagi , M. Satoh , K. Iwamura , C. Kim , Y. Kim , F. Shiraishi , K. Tsuji , S. Minomura

ABSTRACT

Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H. More... »

PAGES

851-854

Book

TITLE

Proceedings of the 17th International Conference on the Physics of Semiconductors

ISBN

978-1-4615-7684-6
978-1-4615-7682-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_189

DIMENSIONS

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