Study of Neutron Transmutation Doping in a-Si:H View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

H. Hamanaka , K. Kuriyama , M. Yahagi , M. Satoh , K. Iwamura , C. Kim , Y. Kim , F. Shiraishi , K. Tsuji , S. Minomura

ABSTRACT

Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H. More... »

PAGES

851-854

Book

TITLE

Proceedings of the 17th International Conference on the Physics of Semiconductors

ISBN

978-1-4615-7684-6
978-1-4615-7682-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_189

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048046982


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hamanaka", 
        "givenName": "H.", 
        "id": "sg:person.014775151775.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014775151775.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuriyama", 
        "givenName": "K.", 
        "id": "sg:person.010734533251.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010734533251.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yahagi", 
        "givenName": "M.", 
        "id": "sg:person.016435362137.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016435362137.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Satoh", 
        "givenName": "M.", 
        "id": "sg:person.011052743164.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011052743164.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Iwamura", 
        "givenName": "K.", 
        "id": "sg:person.011572466367.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011572466367.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea University", 
          "id": "https://www.grid.ac/institutes/grid.448829.b", 
          "name": [
            "Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "C.", 
        "id": "sg:person.015014756633.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015014756633.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea University", 
          "id": "https://www.grid.ac/institutes/grid.448829.b", 
          "name": [
            "Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Y.", 
        "id": "sg:person.015157531445.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015157531445.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rikkyo University", 
          "id": "https://www.grid.ac/institutes/grid.262564.1", 
          "name": [
            "Institute for Atomic Energy, Rikkyo University, Yokosuka, Kanagawa 240-01, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shiraishi", 
        "givenName": "F.", 
        "id": "sg:person.013537662671.64", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013537662671.64"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Tokyo", 
          "id": "https://www.grid.ac/institutes/grid.26999.3d", 
          "name": [
            "Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsuji", 
        "givenName": "K.", 
        "id": "sg:person.012465043005.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465043005.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Tokyo", 
          "id": "https://www.grid.ac/institutes/grid.26999.3d", 
          "name": [
            "Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Minomura", 
        "givenName": "S.", 
        "id": "sg:person.015430100321.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430100321.32"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90548-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043220567"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90548-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043220567"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(75)90284-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048763541"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(75)90284-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048763541"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.325548", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057925641"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.88617", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058128757"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.23.581", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060772958"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.23.581", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060772958"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1985", 
    "datePublishedReg": "1985-01-01", 
    "description": "Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N \u2264l.8\u00d71017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H.", 
    "editor": [
      {
        "familyName": "Chadi", 
        "givenName": "James D.", 
        "type": "Person"
      }, 
      {
        "familyName": "Harrison", 
        "givenName": "Walter A.", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/978-1-4615-7682-2_189", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": {
      "isbn": [
        "978-1-4615-7684-6", 
        "978-1-4615-7682-2"
      ], 
      "name": "Proceedings of the 17th International Conference on the Physics of Semiconductors", 
      "type": "Book"
    }, 
    "name": "Study of Neutron Transmutation Doping in a-Si:H", 
    "pagination": "851-854", 
    "productId": [
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/978-1-4615-7682-2_189"
        ]
      }, 
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e4e2f425a68be2dca07eba54edbe1d7e85e9c68d239c198ed0f401ae12ccb952"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1048046982"
        ]
      }
    ], 
    "publisher": {
      "location": "New York, NY", 
      "name": "Springer New York", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/978-1-4615-7682-2_189", 
      "https://app.dimensions.ai/details/publication/pub.1048046982"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2019-04-15T10:38", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8659_00000273.jsonl", 
    "type": "Chapter", 
    "url": "http://link.springer.com/10.1007/978-1-4615-7682-2_189"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

157 TRIPLES      23 PREDICATES      32 URIs      20 LITERALS      8 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/978-1-4615-7682-2_189 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nea4e179904be41f492ee0996dd575f91
4 schema:citation https://doi.org/10.1016/0022-3093(83)90548-3
5 https://doi.org/10.1016/0038-1098(75)90284-7
6 https://doi.org/10.1063/1.325548
7 https://doi.org/10.1063/1.88617
8 https://doi.org/10.1103/physrevlett.23.581
9 schema:datePublished 1985
10 schema:datePublishedReg 1985-01-01
11 schema:description Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H.
12 schema:editor Nda7a9bc940484d40ae37dec39b55cfaa
13 schema:genre chapter
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N3e5fcd0a99da496294b6b4bc78f468fd
17 schema:name Study of Neutron Transmutation Doping in a-Si:H
18 schema:pagination 851-854
19 schema:productId N156d182f53aa436599a2dc0e9501e614
20 N77973b62d0114361847d137c9341e7a5
21 Nc8fd0e10e5764f44b132d132b07d1a18
22 schema:publisher Ncf1142552d94434da5dd87cba4ec42ce
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048046982
24 https://doi.org/10.1007/978-1-4615-7682-2_189
25 schema:sdDatePublished 2019-04-15T10:38
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher N57e786e7a6d34eaca98c4736194569ed
28 schema:url http://link.springer.com/10.1007/978-1-4615-7682-2_189
29 sgo:license sg:explorer/license/
30 sgo:sdDataset chapters
31 rdf:type schema:Chapter
32 N04b4476c3c5e42fe9523f525cf365679 rdf:first sg:person.012465043005.44
33 rdf:rest Nec191b940df34db69c689e2bdb586fbe
34 N156d182f53aa436599a2dc0e9501e614 schema:name dimensions_id
35 schema:value pub.1048046982
36 rdf:type schema:PropertyValue
37 N17295571eb214c22abc32fd4344e1a96 rdf:first N90f31cc494ed47d8aa6aed82c4d04485
38 rdf:rest rdf:nil
39 N34c1f489a6eb4ecf9d6851c69169a850 rdf:first sg:person.013537662671.64
40 rdf:rest N04b4476c3c5e42fe9523f525cf365679
41 N3ccfb3938cf84860b4981fecc423efcd schema:familyName Chadi
42 schema:givenName James D.
43 rdf:type schema:Person
44 N3e5fcd0a99da496294b6b4bc78f468fd schema:isbn 978-1-4615-7682-2
45 978-1-4615-7684-6
46 schema:name Proceedings of the 17th International Conference on the Physics of Semiconductors
47 rdf:type schema:Book
48 N5359f04ddc2f488aa721526602cb250f rdf:first sg:person.016435362137.96
49 rdf:rest N55275dd0642d4f6e9907257bc9aa00ae
50 N55275dd0642d4f6e9907257bc9aa00ae rdf:first sg:person.011052743164.30
51 rdf:rest N80ac8731f5a646d3ba1ce3b89c98ceff
52 N57e786e7a6d34eaca98c4736194569ed schema:name Springer Nature - SN SciGraph project
53 rdf:type schema:Organization
54 N6790c2e131b045e8b036938000d3dc8f rdf:first sg:person.015157531445.57
55 rdf:rest N34c1f489a6eb4ecf9d6851c69169a850
56 N77973b62d0114361847d137c9341e7a5 schema:name doi
57 schema:value 10.1007/978-1-4615-7682-2_189
58 rdf:type schema:PropertyValue
59 N80ac8731f5a646d3ba1ce3b89c98ceff rdf:first sg:person.011572466367.21
60 rdf:rest N988db116a29d4e60bfc3281109473f5c
61 N90f31cc494ed47d8aa6aed82c4d04485 schema:familyName Harrison
62 schema:givenName Walter A.
63 rdf:type schema:Person
64 N92ca0cf3b6bf4861a7345678ca8f0125 rdf:first sg:person.010734533251.90
65 rdf:rest N5359f04ddc2f488aa721526602cb250f
66 N988db116a29d4e60bfc3281109473f5c rdf:first sg:person.015014756633.33
67 rdf:rest N6790c2e131b045e8b036938000d3dc8f
68 Nc8fd0e10e5764f44b132d132b07d1a18 schema:name readcube_id
69 schema:value e4e2f425a68be2dca07eba54edbe1d7e85e9c68d239c198ed0f401ae12ccb952
70 rdf:type schema:PropertyValue
71 Ncf1142552d94434da5dd87cba4ec42ce schema:location New York, NY
72 schema:name Springer New York
73 rdf:type schema:Organisation
74 Nda7a9bc940484d40ae37dec39b55cfaa rdf:first N3ccfb3938cf84860b4981fecc423efcd
75 rdf:rest N17295571eb214c22abc32fd4344e1a96
76 Nea4e179904be41f492ee0996dd575f91 rdf:first sg:person.014775151775.08
77 rdf:rest N92ca0cf3b6bf4861a7345678ca8f0125
78 Nec191b940df34db69c689e2bdb586fbe rdf:first sg:person.015430100321.32
79 rdf:rest rdf:nil
80 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
81 schema:name Engineering
82 rdf:type schema:DefinedTerm
83 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
84 schema:name Materials Engineering
85 rdf:type schema:DefinedTerm
86 sg:person.010734533251.90 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
87 schema:familyName Kuriyama
88 schema:givenName K.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010734533251.90
90 rdf:type schema:Person
91 sg:person.011052743164.30 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
92 schema:familyName Satoh
93 schema:givenName M.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011052743164.30
95 rdf:type schema:Person
96 sg:person.011572466367.21 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
97 schema:familyName Iwamura
98 schema:givenName K.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011572466367.21
100 rdf:type schema:Person
101 sg:person.012465043005.44 schema:affiliation https://www.grid.ac/institutes/grid.26999.3d
102 schema:familyName Tsuji
103 schema:givenName K.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465043005.44
105 rdf:type schema:Person
106 sg:person.013537662671.64 schema:affiliation https://www.grid.ac/institutes/grid.262564.1
107 schema:familyName Shiraishi
108 schema:givenName F.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013537662671.64
110 rdf:type schema:Person
111 sg:person.014775151775.08 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
112 schema:familyName Hamanaka
113 schema:givenName H.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014775151775.08
115 rdf:type schema:Person
116 sg:person.015014756633.33 schema:affiliation https://www.grid.ac/institutes/grid.448829.b
117 schema:familyName Kim
118 schema:givenName C.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015014756633.33
120 rdf:type schema:Person
121 sg:person.015157531445.57 schema:affiliation https://www.grid.ac/institutes/grid.448829.b
122 schema:familyName Kim
123 schema:givenName Y.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015157531445.57
125 rdf:type schema:Person
126 sg:person.015430100321.32 schema:affiliation https://www.grid.ac/institutes/grid.26999.3d
127 schema:familyName Minomura
128 schema:givenName S.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430100321.32
130 rdf:type schema:Person
131 sg:person.016435362137.96 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
132 schema:familyName Yahagi
133 schema:givenName M.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016435362137.96
135 rdf:type schema:Person
136 https://doi.org/10.1016/0022-3093(83)90548-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043220567
137 rdf:type schema:CreativeWork
138 https://doi.org/10.1016/0038-1098(75)90284-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048763541
139 rdf:type schema:CreativeWork
140 https://doi.org/10.1063/1.325548 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057925641
141 rdf:type schema:CreativeWork
142 https://doi.org/10.1063/1.88617 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058128757
143 rdf:type schema:CreativeWork
144 https://doi.org/10.1103/physrevlett.23.581 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060772958
145 rdf:type schema:CreativeWork
146 https://www.grid.ac/institutes/grid.257114.4 schema:alternateName Hosei University
147 schema:name College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
148 rdf:type schema:Organization
149 https://www.grid.ac/institutes/grid.262564.1 schema:alternateName Rikkyo University
150 schema:name Institute for Atomic Energy, Rikkyo University, Yokosuka, Kanagawa 240-01, Japan
151 rdf:type schema:Organization
152 https://www.grid.ac/institutes/grid.26999.3d schema:alternateName University of Tokyo
153 schema:name Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan
154 rdf:type schema:Organization
155 https://www.grid.ac/institutes/grid.448829.b schema:alternateName Korea University
156 schema:name Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan
157 rdf:type schema:Organization
 




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