Study of Neutron Transmutation Doping in a-Si:H View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

H. Hamanaka , K. Kuriyama , M. Yahagi , M. Satoh , K. Iwamura , C. Kim , Y. Kim , F. Shiraishi , K. Tsuji , S. Minomura

ABSTRACT

Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H. More... »

PAGES

851-854

Book

TITLE

Proceedings of the 17th International Conference on the Physics of Semiconductors

ISBN

978-1-4615-7684-6
978-1-4615-7682-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189

DOI

http://dx.doi.org/10.1007/978-1-4615-7682-2_189

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048046982


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hamanaka", 
        "givenName": "H.", 
        "id": "sg:person.014775151775.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014775151775.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuriyama", 
        "givenName": "K.", 
        "id": "sg:person.010734533251.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010734533251.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yahagi", 
        "givenName": "M.", 
        "id": "sg:person.016435362137.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016435362137.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Satoh", 
        "givenName": "M.", 
        "id": "sg:person.011052743164.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011052743164.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hosei University", 
          "id": "https://www.grid.ac/institutes/grid.257114.4", 
          "name": [
            "College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Iwamura", 
        "givenName": "K.", 
        "id": "sg:person.011572466367.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011572466367.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea University", 
          "id": "https://www.grid.ac/institutes/grid.448829.b", 
          "name": [
            "Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "C.", 
        "id": "sg:person.015014756633.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015014756633.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Korea University", 
          "id": "https://www.grid.ac/institutes/grid.448829.b", 
          "name": [
            "Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kim", 
        "givenName": "Y.", 
        "id": "sg:person.015157531445.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015157531445.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rikkyo University", 
          "id": "https://www.grid.ac/institutes/grid.262564.1", 
          "name": [
            "Institute for Atomic Energy, Rikkyo University, Yokosuka, Kanagawa 240-01, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shiraishi", 
        "givenName": "F.", 
        "id": "sg:person.013537662671.64", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013537662671.64"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Tokyo", 
          "id": "https://www.grid.ac/institutes/grid.26999.3d", 
          "name": [
            "Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsuji", 
        "givenName": "K.", 
        "id": "sg:person.012465043005.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465043005.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Tokyo", 
          "id": "https://www.grid.ac/institutes/grid.26999.3d", 
          "name": [
            "Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Minomura", 
        "givenName": "S.", 
        "id": "sg:person.015430100321.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430100321.32"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90548-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043220567"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90548-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043220567"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(75)90284-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048763541"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(75)90284-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048763541"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.325548", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057925641"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.88617", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058128757"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.23.581", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060772958"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.23.581", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060772958"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1985", 
    "datePublishedReg": "1985-01-01", 
    "description": "Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N \u2264l.8\u00d71017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H.", 
    "editor": [
      {
        "familyName": "Chadi", 
        "givenName": "James D.", 
        "type": "Person"
      }, 
      {
        "familyName": "Harrison", 
        "givenName": "Walter A.", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/978-1-4615-7682-2_189", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": {
      "isbn": [
        "978-1-4615-7684-6", 
        "978-1-4615-7682-2"
      ], 
      "name": "Proceedings of the 17th International Conference on the Physics of Semiconductors", 
      "type": "Book"
    }, 
    "name": "Study of Neutron Transmutation Doping in a-Si:H", 
    "pagination": "851-854", 
    "productId": [
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/978-1-4615-7682-2_189"
        ]
      }, 
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e4e2f425a68be2dca07eba54edbe1d7e85e9c68d239c198ed0f401ae12ccb952"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1048046982"
        ]
      }
    ], 
    "publisher": {
      "location": "New York, NY", 
      "name": "Springer New York", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/978-1-4615-7682-2_189", 
      "https://app.dimensions.ai/details/publication/pub.1048046982"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2019-04-15T10:38", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8659_00000273.jsonl", 
    "type": "Chapter", 
    "url": "http://link.springer.com/10.1007/978-1-4615-7682-2_189"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/978-1-4615-7682-2_189'


 

This table displays all metadata directly associated to this object as RDF triples.

157 TRIPLES      23 PREDICATES      32 URIs      20 LITERALS      8 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/978-1-4615-7682-2_189 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N86934023342f4c3bb66cd60cf2a9c503
4 schema:citation https://doi.org/10.1016/0022-3093(83)90548-3
5 https://doi.org/10.1016/0038-1098(75)90284-7
6 https://doi.org/10.1063/1.325548
7 https://doi.org/10.1063/1.88617
8 https://doi.org/10.1103/physrevlett.23.581
9 schema:datePublished 1985
10 schema:datePublishedReg 1985-01-01
11 schema:description Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H.
12 schema:editor N84ccb887a3c347cbbb86691618683cbc
13 schema:genre chapter
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf Nf36f3ee5343549b89184a301985dec38
17 schema:name Study of Neutron Transmutation Doping in a-Si:H
18 schema:pagination 851-854
19 schema:productId N14334bd70ae84548a36fa5f22bc6a64e
20 N326d57f63fbb46ee9f5a6b9b3711c7f5
21 N39a450da60744c49849b7861bb3cf67b
22 schema:publisher N0d60dff0e9d74ba086aaf25c3ffb038c
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048046982
24 https://doi.org/10.1007/978-1-4615-7682-2_189
25 schema:sdDatePublished 2019-04-15T10:38
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher N8e1505d9248841098e1786ce148cdb25
28 schema:url http://link.springer.com/10.1007/978-1-4615-7682-2_189
29 sgo:license sg:explorer/license/
30 sgo:sdDataset chapters
31 rdf:type schema:Chapter
32 N06d7a8da32ae4cb3a8373d2c5c471b3c rdf:first sg:person.016435362137.96
33 rdf:rest Nc8123f1267744f9e9f69522567e25485
34 N0d60dff0e9d74ba086aaf25c3ffb038c schema:location New York, NY
35 schema:name Springer New York
36 rdf:type schema:Organisation
37 N14334bd70ae84548a36fa5f22bc6a64e schema:name doi
38 schema:value 10.1007/978-1-4615-7682-2_189
39 rdf:type schema:PropertyValue
40 N326d57f63fbb46ee9f5a6b9b3711c7f5 schema:name readcube_id
41 schema:value e4e2f425a68be2dca07eba54edbe1d7e85e9c68d239c198ed0f401ae12ccb952
42 rdf:type schema:PropertyValue
43 N39a450da60744c49849b7861bb3cf67b schema:name dimensions_id
44 schema:value pub.1048046982
45 rdf:type schema:PropertyValue
46 N4d98a11e4f7243b983ffd271262260b0 rdf:first sg:person.011572466367.21
47 rdf:rest Ne8c697fd8aac48b49a0b8aaac167c33e
48 N6230b6a9730144caae22e7eed067f1f5 rdf:first sg:person.012465043005.44
49 rdf:rest Ne5cbfc4bbb6a4e4b82bdd5836bfbc17c
50 N63e48ccfc3da4bbd8f62f12e155dfe5c schema:familyName Chadi
51 schema:givenName James D.
52 rdf:type schema:Person
53 N727ae4dad26a4f9c9633635588915df6 schema:familyName Harrison
54 schema:givenName Walter A.
55 rdf:type schema:Person
56 N82fbeafa639748fabf539831acaeae49 rdf:first sg:person.013537662671.64
57 rdf:rest N6230b6a9730144caae22e7eed067f1f5
58 N84ccb887a3c347cbbb86691618683cbc rdf:first N63e48ccfc3da4bbd8f62f12e155dfe5c
59 rdf:rest Ncd94e645b7a64e5bb6c77f52107bcb13
60 N86934023342f4c3bb66cd60cf2a9c503 rdf:first sg:person.014775151775.08
61 rdf:rest N9149ab81eb3f4df993209c93973f904b
62 N8e1505d9248841098e1786ce148cdb25 schema:name Springer Nature - SN SciGraph project
63 rdf:type schema:Organization
64 N9149ab81eb3f4df993209c93973f904b rdf:first sg:person.010734533251.90
65 rdf:rest N06d7a8da32ae4cb3a8373d2c5c471b3c
66 Nbe28146ffa0449d4840c17b08d3eb344 rdf:first sg:person.015157531445.57
67 rdf:rest N82fbeafa639748fabf539831acaeae49
68 Nc8123f1267744f9e9f69522567e25485 rdf:first sg:person.011052743164.30
69 rdf:rest N4d98a11e4f7243b983ffd271262260b0
70 Ncd94e645b7a64e5bb6c77f52107bcb13 rdf:first N727ae4dad26a4f9c9633635588915df6
71 rdf:rest rdf:nil
72 Ne5cbfc4bbb6a4e4b82bdd5836bfbc17c rdf:first sg:person.015430100321.32
73 rdf:rest rdf:nil
74 Ne8c697fd8aac48b49a0b8aaac167c33e rdf:first sg:person.015014756633.33
75 rdf:rest Nbe28146ffa0449d4840c17b08d3eb344
76 Nf36f3ee5343549b89184a301985dec38 schema:isbn 978-1-4615-7682-2
77 978-1-4615-7684-6
78 schema:name Proceedings of the 17th International Conference on the Physics of Semiconductors
79 rdf:type schema:Book
80 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
81 schema:name Engineering
82 rdf:type schema:DefinedTerm
83 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
84 schema:name Materials Engineering
85 rdf:type schema:DefinedTerm
86 sg:person.010734533251.90 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
87 schema:familyName Kuriyama
88 schema:givenName K.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010734533251.90
90 rdf:type schema:Person
91 sg:person.011052743164.30 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
92 schema:familyName Satoh
93 schema:givenName M.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011052743164.30
95 rdf:type schema:Person
96 sg:person.011572466367.21 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
97 schema:familyName Iwamura
98 schema:givenName K.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011572466367.21
100 rdf:type schema:Person
101 sg:person.012465043005.44 schema:affiliation https://www.grid.ac/institutes/grid.26999.3d
102 schema:familyName Tsuji
103 schema:givenName K.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465043005.44
105 rdf:type schema:Person
106 sg:person.013537662671.64 schema:affiliation https://www.grid.ac/institutes/grid.262564.1
107 schema:familyName Shiraishi
108 schema:givenName F.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013537662671.64
110 rdf:type schema:Person
111 sg:person.014775151775.08 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
112 schema:familyName Hamanaka
113 schema:givenName H.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014775151775.08
115 rdf:type schema:Person
116 sg:person.015014756633.33 schema:affiliation https://www.grid.ac/institutes/grid.448829.b
117 schema:familyName Kim
118 schema:givenName C.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015014756633.33
120 rdf:type schema:Person
121 sg:person.015157531445.57 schema:affiliation https://www.grid.ac/institutes/grid.448829.b
122 schema:familyName Kim
123 schema:givenName Y.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015157531445.57
125 rdf:type schema:Person
126 sg:person.015430100321.32 schema:affiliation https://www.grid.ac/institutes/grid.26999.3d
127 schema:familyName Minomura
128 schema:givenName S.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430100321.32
130 rdf:type schema:Person
131 sg:person.016435362137.96 schema:affiliation https://www.grid.ac/institutes/grid.257114.4
132 schema:familyName Yahagi
133 schema:givenName M.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016435362137.96
135 rdf:type schema:Person
136 https://doi.org/10.1016/0022-3093(83)90548-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043220567
137 rdf:type schema:CreativeWork
138 https://doi.org/10.1016/0038-1098(75)90284-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048763541
139 rdf:type schema:CreativeWork
140 https://doi.org/10.1063/1.325548 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057925641
141 rdf:type schema:CreativeWork
142 https://doi.org/10.1063/1.88617 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058128757
143 rdf:type schema:CreativeWork
144 https://doi.org/10.1103/physrevlett.23.581 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060772958
145 rdf:type schema:CreativeWork
146 https://www.grid.ac/institutes/grid.257114.4 schema:alternateName Hosei University
147 schema:name College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
148 rdf:type schema:Organization
149 https://www.grid.ac/institutes/grid.262564.1 schema:alternateName Rikkyo University
150 schema:name Institute for Atomic Energy, Rikkyo University, Yokosuka, Kanagawa 240-01, Japan
151 rdf:type schema:Organization
152 https://www.grid.ac/institutes/grid.26999.3d schema:alternateName University of Tokyo
153 schema:name Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan
154 rdf:type schema:Organization
155 https://www.grid.ac/institutes/grid.448829.b schema:alternateName Korea University
156 schema:name Department of Electronics Engineering, Korea University, Kodaira, Tokyo 187, Japan
157 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...