δ-Structures in Gallium Arsenide View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1992

AUTHORS

D. I. Lubyshev , V. P. Migal’ , V. N. Ovsyuk , B. R. Semyagin , S. I. Stenin

ABSTRACT

A new class of semiconducting structures with δ-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [1].

PAGES

99-103

Book

TITLE

Growth of Crystals

ISBN

978-0-306-18118-4
978-1-4615-3268-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4615-3268-2_9

DOI

http://dx.doi.org/10.1007/978-1-4615-3268-2_9

DIMENSIONS

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