Microstructural Analysis of Silicon Carbide Materials with BeO Addition View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1987

AUTHORS

S. Shinozaki , J. Hangas , K. Maeda

ABSTRACT

The microstructures of SiC materials with BeO addition have been studied by analytical electron microscopy (AEM). The SiC-BeO materials have unique physical properties of high thermal conductivity and high electrical resistivity. The BeO additive remains mostly intact in triple points and enhances β to 4H phase transformation to form complex mixture of 4H lamellae and heavily twinned β. Difference in diffusion of BeO into β zones epitaxially grown on original 6H starting grains and the original 6H zone are responsible for the formation of thin sheaths with complex mixture of polytypes. Segregation of BeO to these sheaths creates a thin high electrically resistive zone. More... »

PAGES

767-774

Book

TITLE

Ceramic Microstructures ’86

ISBN

978-1-4612-9074-2
978-1-4613-1933-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4613-1933-7_77

DOI

http://dx.doi.org/10.1007/978-1-4613-1933-7_77

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016884880


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