Pressure-Induced Effects on Phonons and Gap States in Alloy Semiconductors View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1987

AUTHORS

Shigeru Minomura

ABSTRACT

Pressure has proven to be a useful technique for understanding the structual and electronic properties of condensed matter. One can use pressure as an independent variable to change the volume and electronic states in a controlled way. As a consequence, the compression gives rise to a change in electronic properties and eventually to a new ground state with different electronic properties. One of the most spectacular results of high-pressure research over the past three decades has been demonstrated that the structural and electronic transitions are unique phenomena (1). High-pressure research can be traditionally divided into two categories: one deals with intrinsically high-pressure phenomena such as insulator-metal transitions; the other involves pressure-induced effects or dependences for better understanding of the structural and electronic properties at one atmosphere. More... »

PAGES

125-134

Book

TITLE

Disordered Semiconductors

ISBN

978-1-4612-9028-5
978-1-4613-1841-5

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4613-1841-5_16

DOI

http://dx.doi.org/10.1007/978-1-4613-1841-5_16

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020497497


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