Introduction View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1987

AUTHORS

Marc A. Kastner , Gordon A. Thomas , Stanford R. Ovshinsky

ABSTRACT

It is hard to imagine now, in the 1980’s, how little interest there was in the 1950’s in the electronic properties of disordered semiconductors (amorphous or crystalline with high impurity or defect density). Heavily-doped semiconductors were considered dirty systems, unworthy of careful study. Today, one can find in many textbooks a section on the metal-insulator transition which inevitably includes or refers to the famous figure from the research group of Fritzsche at the University of Chicago elaborating the properties of this trnsition in doped, compensated Ge. That work began an evolution which has made the problem of the metal-insulator transition in disordered materials one of the most sophisticated and elegant in solid-state physics. More... »

PAGES

1-2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4613-1841-5_1

DOI

http://dx.doi.org/10.1007/978-1-4613-1841-5_1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1032834606


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Massachusetts Institute of Technology, Cambridge, Massachusetts, USA", 
          "id": "http://www.grid.ac/institutes/grid.116068.8", 
          "name": [
            "Massachusetts Institute of Technology, Cambridge, Massachusetts, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kastner", 
        "givenName": "Marc A.", 
        "id": "sg:person.011522436652.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011522436652.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "AT&T Bell Laboratories, Murray Hill, New Jersey, USA", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "AT&T Bell Laboratories, Murray Hill, New Jersey, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Thomas", 
        "givenName": "Gordon A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Energy Conversion Devices, Inc., Troy, Michigan, USA", 
          "id": "http://www.grid.ac/institutes/grid.418162.8", 
          "name": [
            "Energy Conversion Devices, Inc., Troy, Michigan, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ovshinsky", 
        "givenName": "Stanford R.", 
        "id": "sg:person.016034446511.52", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016034446511.52"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1987", 
    "datePublishedReg": "1987-01-01", 
    "description": "It is hard to imagine now, in the 1980\u2019s, how little interest there was in the 1950\u2019s in the electronic properties of disordered semiconductors (amorphous or crystalline with high impurity or defect density). Heavily-doped semiconductors were considered dirty systems, unworthy of careful study. Today, one can find in many textbooks a section on the metal-insulator transition which inevitably includes or refers to the famous figure from the research group of Fritzsche at the University of Chicago elaborating the properties of this trnsition in doped, compensated Ge. That work began an evolution which has made the problem of the metal-insulator transition in disordered materials one of the most sophisticated and elegant in solid-state physics.", 
    "editor": [
      {
        "familyName": "Kastner", 
        "givenName": "Marc A.", 
        "type": "Person"
      }, 
      {
        "familyName": "Thomas", 
        "givenName": "Gordon A.", 
        "type": "Person"
      }, 
      {
        "familyName": "Ovshinsky", 
        "givenName": "Stanford R.", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/978-1-4613-1841-5_1", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": {
      "isbn": [
        "978-1-4612-9028-5", 
        "978-1-4613-1841-5"
      ], 
      "name": "Disordered Semiconductors", 
      "type": "Book"
    }, 
    "keywords": [
      "metal-insulator transition", 
      "electronic properties", 
      "solid-state physics", 
      "semiconductors", 
      "properties", 
      "research groups", 
      "material one", 
      "transition", 
      "Ge", 
      "careful study", 
      "introduction", 
      "work", 
      "interest", 
      "group", 
      "Fritzsche", 
      "physics", 
      "system", 
      "one", 
      "study", 
      "evolution", 
      "sections", 
      "today", 
      "University of Chicago", 
      "figures", 
      "little interest", 
      "problem", 
      "textbooks", 
      "University", 
      "Chicago", 
      "famous figures", 
      "dirty systems", 
      "trnsition"
    ], 
    "name": "Introduction", 
    "pagination": "1-2", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1032834606"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/978-1-4613-1841-5_1"
        ]
      }
    ], 
    "publisher": {
      "name": "Springer Nature", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/978-1-4613-1841-5_1", 
      "https://app.dimensions.ai/details/publication/pub.1032834606"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2022-01-01T19:21", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/chapter/chapter_372.jsonl", 
    "type": "Chapter", 
    "url": "https://doi.org/10.1007/978-1-4613-1841-5_1"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

121 TRIPLES      23 PREDICATES      58 URIs      51 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/978-1-4613-1841-5_1 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nc0be1f70b9014aefa412bac38d1884f6
4 schema:datePublished 1987
5 schema:datePublishedReg 1987-01-01
6 schema:description It is hard to imagine now, in the 1980’s, how little interest there was in the 1950’s in the electronic properties of disordered semiconductors (amorphous or crystalline with high impurity or defect density). Heavily-doped semiconductors were considered dirty systems, unworthy of careful study. Today, one can find in many textbooks a section on the metal-insulator transition which inevitably includes or refers to the famous figure from the research group of Fritzsche at the University of Chicago elaborating the properties of this trnsition in doped, compensated Ge. That work began an evolution which has made the problem of the metal-insulator transition in disordered materials one of the most sophisticated and elegant in solid-state physics.
7 schema:editor Nc42442d2cca54577bc9283f74fa0665c
8 schema:genre chapter
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N1b23f4e4f6d44e0cbae817161c81133a
12 schema:keywords Chicago
13 Fritzsche
14 Ge
15 University
16 University of Chicago
17 careful study
18 dirty systems
19 electronic properties
20 evolution
21 famous figures
22 figures
23 group
24 interest
25 introduction
26 little interest
27 material one
28 metal-insulator transition
29 one
30 physics
31 problem
32 properties
33 research groups
34 sections
35 semiconductors
36 solid-state physics
37 study
38 system
39 textbooks
40 today
41 transition
42 trnsition
43 work
44 schema:name Introduction
45 schema:pagination 1-2
46 schema:productId N06e116bb444347d5990602763944921d
47 N2c4f6b7eb1524128b8fe1696c1a91780
48 schema:publisher N5d81b79f405c4159b16bfe0ae6858068
49 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032834606
50 https://doi.org/10.1007/978-1-4613-1841-5_1
51 schema:sdDatePublished 2022-01-01T19:21
52 schema:sdLicense https://scigraph.springernature.com/explorer/license/
53 schema:sdPublisher Nf9c7452ad83247b2b0828f0b36666d18
54 schema:url https://doi.org/10.1007/978-1-4613-1841-5_1
55 sgo:license sg:explorer/license/
56 sgo:sdDataset chapters
57 rdf:type schema:Chapter
58 N0605800281b24fe2931da725aec21e7d rdf:first N831256c7220b4e9698a5aa6af784e577
59 rdf:rest Nc582650f9fe346a9a766ec53d5e5a80c
60 N06e116bb444347d5990602763944921d schema:name dimensions_id
61 schema:value pub.1032834606
62 rdf:type schema:PropertyValue
63 N133981141df941af934d2ca57edc9342 schema:familyName Kastner
64 schema:givenName Marc A.
65 rdf:type schema:Person
66 N1b23f4e4f6d44e0cbae817161c81133a schema:isbn 978-1-4612-9028-5
67 978-1-4613-1841-5
68 schema:name Disordered Semiconductors
69 rdf:type schema:Book
70 N2c4f6b7eb1524128b8fe1696c1a91780 schema:name doi
71 schema:value 10.1007/978-1-4613-1841-5_1
72 rdf:type schema:PropertyValue
73 N5d81b79f405c4159b16bfe0ae6858068 schema:name Springer Nature
74 rdf:type schema:Organisation
75 N831256c7220b4e9698a5aa6af784e577 schema:affiliation grid-institutes:None
76 schema:familyName Thomas
77 schema:givenName Gordon A.
78 rdf:type schema:Person
79 N8bed9d6836ea40da8cc0ee76038ebd5d rdf:first Nbf7d9d660ddb45aabeb75cefec4490c8
80 rdf:rest rdf:nil
81 Nbf7d9d660ddb45aabeb75cefec4490c8 schema:familyName Ovshinsky
82 schema:givenName Stanford R.
83 rdf:type schema:Person
84 Nc0be1f70b9014aefa412bac38d1884f6 rdf:first sg:person.011522436652.55
85 rdf:rest N0605800281b24fe2931da725aec21e7d
86 Nc42442d2cca54577bc9283f74fa0665c rdf:first N133981141df941af934d2ca57edc9342
87 rdf:rest Nf466ec7a29044fb99bbbb2a449cb0830
88 Nc582650f9fe346a9a766ec53d5e5a80c rdf:first sg:person.016034446511.52
89 rdf:rest rdf:nil
90 Nf466ec7a29044fb99bbbb2a449cb0830 rdf:first Nf5341444bba34b7a820fc964f188d849
91 rdf:rest N8bed9d6836ea40da8cc0ee76038ebd5d
92 Nf5341444bba34b7a820fc964f188d849 schema:familyName Thomas
93 schema:givenName Gordon A.
94 rdf:type schema:Person
95 Nf9c7452ad83247b2b0828f0b36666d18 schema:name Springer Nature - SN SciGraph project
96 rdf:type schema:Organization
97 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
98 schema:name Engineering
99 rdf:type schema:DefinedTerm
100 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
101 schema:name Materials Engineering
102 rdf:type schema:DefinedTerm
103 sg:person.011522436652.55 schema:affiliation grid-institutes:grid.116068.8
104 schema:familyName Kastner
105 schema:givenName Marc A.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011522436652.55
107 rdf:type schema:Person
108 sg:person.016034446511.52 schema:affiliation grid-institutes:grid.418162.8
109 schema:familyName Ovshinsky
110 schema:givenName Stanford R.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016034446511.52
112 rdf:type schema:Person
113 grid-institutes:None schema:alternateName AT&T Bell Laboratories, Murray Hill, New Jersey, USA
114 schema:name AT&T Bell Laboratories, Murray Hill, New Jersey, USA
115 rdf:type schema:Organization
116 grid-institutes:grid.116068.8 schema:alternateName Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
117 schema:name Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
118 rdf:type schema:Organization
119 grid-institutes:grid.418162.8 schema:alternateName Energy Conversion Devices, Inc., Troy, Michigan, USA
120 schema:name Energy Conversion Devices, Inc., Troy, Michigan, USA
121 rdf:type schema:Organization
 




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