Temperature Dependence of Photoluminescence in InGaAsP/InP Strained MQW Heterostructures View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1996

AUTHORS

O. Y. Raisky , W. B. Wang , R. R. Alfano , C. L. Reynolds , V. Swaminathan

ABSTRACT

Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices1. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells2 (QW).

PAGES

11-13

Book

TITLE

Hot Carriers in Semiconductors

ISBN

978-1-4613-8035-1
978-1-4613-0401-2

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4613-0401-2_3

DOI

http://dx.doi.org/10.1007/978-1-4613-0401-2_3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009894436


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