MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2004

AUTHORS

W. V. Lundin , A. V. Sakharov , A. F. Tsatsul’nikov , E. E. Zavarin , A. I. Besulkin , A. V. Fomin , D. S. Sizov

ABSTRACT

Peculiarities of AlGaN epilayer and AlGaN/GaN superlattice (SL) growth were investigated using R&D-scale (Epiquip VP-50 RP, 1 × 2 inch) and production-scale (AIX2000HT, 6 × 2 inch) MOCVD reactors. Structures with AlGaN in a whole composition range were grown. For both reactors, it was revealed that dependence of AlGaN composition on TMA flow has a strong trend for saturation (more pronounced effect is for the larger reactor). The saturation seems to be a manifestation of parasitic reactions and a critical parameter responsible for it is the TMA partial pressure in the reactor. In addition to a reduction of reactor pressure, the AlN mole fraction in AlGaN layers may be increased by magnification of the total flow in the reactor and a reduction of the TMG flow. Up to 20% AlN mole fraction was reached in AIX2000HT at 400 mbar reactor pressure (up to 40% at 200 mbar) using this practice. Growth of AlGaN with the AlN mole fraction above 60–70% (smaller reactor) was achieved using a reduced ammonia flow to suppress parasitic reactions. More... »

PAGES

223-231

Book

TITLE

UV Solid-State Light Emitters and Detectors

ISBN

978-1-4020-2035-3
978-1-4020-2103-9

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-1-4020-2103-9_17

DOI

http://dx.doi.org/10.1007/978-1-4020-2103-9_17

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034608131


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