High Magnetic Fields in Semiconductor Nanostructures: Spin Effects in Single InAs Quantum Dots View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2002-07-08

AUTHORS

U. Zeitler , I. Hapke-Wurst , D. Sarkar , R. J. Haug , H. Frahm , K. Pierz , A. G. M. Jansen

ABSTRACT

We present a prominent example how the influence of high magnetic fields can lead to spectacular field induced effects in a semiconductor nanostructure. We observe current steps in the I–V characteristics of a GaAs-AlAs tunnelling structure with self-assembled InAs quantum dots embedded in the AlAs barrier. The steps originate from resonant tunnelling through individual InAs quantum dots. In a magnetic field the Zeeman splitting of the quantized dot states leads to a splitting of each current step in two. The Landé factor deduced from these measurements is in the range g = 0.6... 1.5 depending on the size of the dot and the orientation of the magnetic field. In high magnetic fields (B > 20 T) the current steps evolve into extremely enhanced peaks. The effect observed is explained by a field induced Fermi-edge singularity caused by the Coulomb interaction between the tunnelling electron on the quantum dot and the partly spin-polarized Fermi sea in the Landau quantized three-dimensional emitter. More... »

PAGES

3-12

Book

TITLE

Advances in Solid State Physics

ISBN

978-3-540-42907-4

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-45618-x_1

DOI

http://dx.doi.org/10.1007/3-540-45618-x_1

DIMENSIONS

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