Beta to alpha transition and defects on SiC on Si grown by CVD View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2005

AUTHORS

F M Morales , Ch Förster , O Ambacher , J Pezoldt

ABSTRACT

The features of α-SiC (0001) epitaxially grown on top of β-SiC(l11)/Si(111) is reported by means of transmission electron microscopy (TEM). Hexagonal and rhombohedral polytype nuclei, mainly 4H-SiC, appear after the growth of a fixed cubic SiC thickness which is related to the selected growth conditions: Si/C ratio and growth temperature. The defect structure of these multilayer systems (voids, planar defects, facets and polycrystalline top clusters) and the hexagonality of the SiC surface are determined and described. More... »

PAGES

131-134

Book

TITLE

Microscopy of Semiconducting Materials

ISBN

978-3-540-31914-6

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-31915-8_25

DOI

http://dx.doi.org/10.1007/3-540-31915-8_25

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029299723


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