Forró
L.
https://scigraph.springernature.com/explorer/license/
nonlinear transport
chapters
RUTE
pressure
resistivity
data
model
2022-12-01T06:52
gap
transport
field
transition temperature
phase transition temperature
effect of pressure
false
https://doi.org/10.1007/3-540-13913-3_235
chapter
decrease
carrier density
explanation
nonlinear regime
hydrostatic pressure
temperature
ambiant pressure
effect
361-365
dependence
threshold field
temperature dependence
energy gap
1985-01-01
state decreases
kbar
We present the effect of hydrostatic pressure on the resistivity of (TaSe4)2I in both ohmic and nonlinear regimes. The phase transition temperature of 262 K at ambiant pressure initially increases at the rute of 1 K/kbar, has a maximum and above 12 kbars it starts to decrease. The semiconducting energy gap in the Peierls state decreases by 50 K/kbar, i.e. 1.7%/kbar. The effect of pressure on the threshold field is also drastic. At 190 K it decreases from 2.0 V/cm at ambiant pressure to 0.8 V/cm at 12 kbars, but it continous to show the exponential temperature dependence. For the explanation of these data we propose a model whereby the temperature dependence of the threshold field depends on the normal carrier density.
density
exponential temperature dependence
regime
Ohmic and nonlinear transport of (TaSe4)2I under pressure
semiconducting energy gap
1985
Bouffard
S.
978-3-540-39137-1
Charge Density Waves in Solids
978-3-540-13913-3
A.
Jánossy
doi
10.1007/3-540-13913-3_235
Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France
Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France
Mutka
H.
Materials Engineering
J.
Morillo
dimensions_id
pub.1025531792
Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary
Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary
Springer Nature
Sólyom
Jenö
Engineering
Hutiray
Gyula
Springer Nature - SN SciGraph project