Ohmic and nonlinear transport of (TaSe4)2I under pressure View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

L. Forró , H. Mutka , S. Bouffard , J. Morillo , A. Jánossy

ABSTRACT

We present the effect of hydrostatic pressure on the resistivity of (TaSe4)2I in both ohmic and nonlinear regimes. The phase transition temperature of 262 K at ambiant pressure initially increases at the rute of 1 K/kbar, has a maximum and above 12 kbars it starts to decrease. The semiconducting energy gap in the Peierls state decreases by 50 K/kbar, i.e. 1.7%/kbar. The effect of pressure on the threshold field is also drastic. At 190 K it decreases from 2.0 V/cm at ambiant pressure to 0.8 V/cm at 12 kbars, but it continous to show the exponential temperature dependence. For the explanation of these data we propose a model whereby the temperature dependence of the threshold field depends on the normal carrier density. More... »

PAGES

361-365

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-13913-3_235

DOI

http://dx.doi.org/10.1007/3-540-13913-3_235

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025531792


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Forr\u00f3", 
        "givenName": "L.", 
        "id": "sg:person.01273427767.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01273427767.72"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mutka", 
        "givenName": "H.", 
        "id": "sg:person.0731605044.52", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0731605044.52"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouffard", 
        "givenName": "S.", 
        "id": "sg:person.012720412635.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012720412635.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Morillo", 
        "givenName": "J.", 
        "id": "sg:person.011512230353.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011512230353.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary", 
          "id": "http://www.grid.ac/institutes/grid.419766.b", 
          "name": [
            "Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary"
          ], 
          "type": "Organization"
        }, 
        "familyName": "J\u00e1nossy", 
        "givenName": "A.", 
        "id": "sg:person.0620351217.56", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0620351217.56"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1985", 
    "datePublishedReg": "1985-01-01", 
    "description": "We present the effect of hydrostatic pressure on the resistivity of (TaSe4)2I in both ohmic and nonlinear regimes. The phase transition temperature of 262 K at ambiant pressure initially increases at the rute of 1 K/kbar, has a maximum and above 12 kbars it starts to decrease. The semiconducting energy gap in the Peierls state decreases by 50 K/kbar, i.e. 1.7%/kbar. The effect of pressure on the threshold field is also drastic. At 190 K it decreases from 2.0 V/cm at ambiant pressure to 0.8 V/cm at 12 kbars, but it continous to show the exponential temperature dependence. For the explanation of these data we propose a model whereby the temperature dependence of the threshold field depends on the normal carrier density.", 
    "editor": [
      {
        "familyName": "Hutiray", 
        "givenName": "Gyula", 
        "type": "Person"
      }, 
      {
        "familyName": "S\u00f3lyom", 
        "givenName": "Jen\u00f6", 
        "type": "Person"
      }
    ], 
    "genre": "chapter", 
    "id": "sg:pub.10.1007/3-540-13913-3_235", 
    "isAccessibleForFree": false, 
    "isPartOf": {
      "isbn": [
        "978-3-540-13913-3", 
        "978-3-540-39137-1"
      ], 
      "name": "Charge Density Waves in Solids", 
      "type": "Book"
    }, 
    "keywords": [
      "threshold field", 
      "semiconducting energy gap", 
      "temperature dependence", 
      "nonlinear transport", 
      "carrier density", 
      "energy gap", 
      "exponential temperature dependence", 
      "nonlinear regime", 
      "state decreases", 
      "ambiant pressure", 
      "phase transition temperature", 
      "transition temperature", 
      "effect of pressure", 
      "dependence", 
      "hydrostatic pressure", 
      "field", 
      "kbar", 
      "resistivity", 
      "regime", 
      "density", 
      "gap", 
      "temperature", 
      "pressure", 
      "transport", 
      "RUTE", 
      "effect", 
      "explanation", 
      "model", 
      "decrease", 
      "data"
    ], 
    "name": "Ohmic and nonlinear transport of (TaSe4)2I under pressure", 
    "pagination": "361-365", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1025531792"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/3-540-13913-3_235"
        ]
      }
    ], 
    "publisher": {
      "name": "Springer Nature", 
      "type": "Organisation"
    }, 
    "sameAs": [
      "https://doi.org/10.1007/3-540-13913-3_235", 
      "https://app.dimensions.ai/details/publication/pub.1025531792"
    ], 
    "sdDataset": "chapters", 
    "sdDatePublished": "2022-09-02T16:14", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/chapter/chapter_348.jsonl", 
    "type": "Chapter", 
    "url": "https://doi.org/10.1007/3-540-13913-3_235"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/3-540-13913-3_235'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/3-540-13913-3_235'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/3-540-13913-3_235'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/3-540-13913-3_235'


 

This table displays all metadata directly associated to this object as RDF triples.

125 TRIPLES      22 PREDICATES      55 URIs      48 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/3-540-13913-3_235 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N7776a80a635a4ae48b8f82e388754178
4 schema:datePublished 1985
5 schema:datePublishedReg 1985-01-01
6 schema:description We present the effect of hydrostatic pressure on the resistivity of (TaSe4)2I in both ohmic and nonlinear regimes. The phase transition temperature of 262 K at ambiant pressure initially increases at the rute of 1 K/kbar, has a maximum and above 12 kbars it starts to decrease. The semiconducting energy gap in the Peierls state decreases by 50 K/kbar, i.e. 1.7%/kbar. The effect of pressure on the threshold field is also drastic. At 190 K it decreases from 2.0 V/cm at ambiant pressure to 0.8 V/cm at 12 kbars, but it continous to show the exponential temperature dependence. For the explanation of these data we propose a model whereby the temperature dependence of the threshold field depends on the normal carrier density.
7 schema:editor N68d867cd5b29407eb8a70503a30b6795
8 schema:genre chapter
9 schema:isAccessibleForFree false
10 schema:isPartOf N59dc40835ff44545b6ad9e60ab37f54e
11 schema:keywords RUTE
12 ambiant pressure
13 carrier density
14 data
15 decrease
16 density
17 dependence
18 effect
19 effect of pressure
20 energy gap
21 explanation
22 exponential temperature dependence
23 field
24 gap
25 hydrostatic pressure
26 kbar
27 model
28 nonlinear regime
29 nonlinear transport
30 phase transition temperature
31 pressure
32 regime
33 resistivity
34 semiconducting energy gap
35 state decreases
36 temperature
37 temperature dependence
38 threshold field
39 transition temperature
40 transport
41 schema:name Ohmic and nonlinear transport of (TaSe4)2I under pressure
42 schema:pagination 361-365
43 schema:productId N038bece2a9444819a66e500dbac0b645
44 N2d2497d6423a4a6383d0fb664630e0b6
45 schema:publisher N04c8f3f43fb84a4e971c8ebc97c384b5
46 schema:sameAs https://app.dimensions.ai/details/publication/pub.1025531792
47 https://doi.org/10.1007/3-540-13913-3_235
48 schema:sdDatePublished 2022-09-02T16:14
49 schema:sdLicense https://scigraph.springernature.com/explorer/license/
50 schema:sdPublisher N69f176668cbf4d73881f267726a9704b
51 schema:url https://doi.org/10.1007/3-540-13913-3_235
52 sgo:license sg:explorer/license/
53 sgo:sdDataset chapters
54 rdf:type schema:Chapter
55 N038bece2a9444819a66e500dbac0b645 schema:name dimensions_id
56 schema:value pub.1025531792
57 rdf:type schema:PropertyValue
58 N04c8f3f43fb84a4e971c8ebc97c384b5 schema:name Springer Nature
59 rdf:type schema:Organisation
60 N11c0e0ac54df4dafb78d9f3e27da70cf rdf:first N25b7bd7f491f44219bbd8ceb3e05a95b
61 rdf:rest rdf:nil
62 N25b7bd7f491f44219bbd8ceb3e05a95b schema:familyName Sólyom
63 schema:givenName Jenö
64 rdf:type schema:Person
65 N2d2497d6423a4a6383d0fb664630e0b6 schema:name doi
66 schema:value 10.1007/3-540-13913-3_235
67 rdf:type schema:PropertyValue
68 N59dc40835ff44545b6ad9e60ab37f54e schema:isbn 978-3-540-13913-3
69 978-3-540-39137-1
70 schema:name Charge Density Waves in Solids
71 rdf:type schema:Book
72 N6194a217149343f99c9503275c935d0e rdf:first sg:person.0731605044.52
73 rdf:rest N6fceea04a8d44dbbbad875209f22fd92
74 N68d867cd5b29407eb8a70503a30b6795 rdf:first Nb51d3208a503460885b60bb9fc085d05
75 rdf:rest N11c0e0ac54df4dafb78d9f3e27da70cf
76 N69f176668cbf4d73881f267726a9704b schema:name Springer Nature - SN SciGraph project
77 rdf:type schema:Organization
78 N6fceea04a8d44dbbbad875209f22fd92 rdf:first sg:person.012720412635.62
79 rdf:rest Nad4fac714adf40d3b883ee6cc7b3e5fd
80 N7776a80a635a4ae48b8f82e388754178 rdf:first sg:person.01273427767.72
81 rdf:rest N6194a217149343f99c9503275c935d0e
82 Nad4fac714adf40d3b883ee6cc7b3e5fd rdf:first sg:person.011512230353.02
83 rdf:rest Ncd1a12fceb4f43bc861986d39a2c09a8
84 Nb51d3208a503460885b60bb9fc085d05 schema:familyName Hutiray
85 schema:givenName Gyula
86 rdf:type schema:Person
87 Ncd1a12fceb4f43bc861986d39a2c09a8 rdf:first sg:person.0620351217.56
88 rdf:rest rdf:nil
89 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
90 schema:name Engineering
91 rdf:type schema:DefinedTerm
92 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
93 schema:name Materials Engineering
94 rdf:type schema:DefinedTerm
95 sg:person.011512230353.02 schema:affiliation grid-institutes:None
96 schema:familyName Morillo
97 schema:givenName J.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011512230353.02
99 rdf:type schema:Person
100 sg:person.012720412635.62 schema:affiliation grid-institutes:None
101 schema:familyName Bouffard
102 schema:givenName S.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012720412635.62
104 rdf:type schema:Person
105 sg:person.01273427767.72 schema:affiliation grid-institutes:None
106 schema:familyName Forró
107 schema:givenName L.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01273427767.72
109 rdf:type schema:Person
110 sg:person.0620351217.56 schema:affiliation grid-institutes:grid.419766.b
111 schema:familyName Jánossy
112 schema:givenName A.
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0620351217.56
114 rdf:type schema:Person
115 sg:person.0731605044.52 schema:affiliation grid-institutes:None
116 schema:familyName Mutka
117 schema:givenName H.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0731605044.52
119 rdf:type schema:Person
120 grid-institutes:None schema:alternateName Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France
121 schema:name Cenfar, S.E.S.I., B.P. N26, 92260, Fontenay Aux Roses, France
122 rdf:type schema:Organization
123 grid-institutes:grid.419766.b schema:alternateName Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary
124 schema:name Central Research Institute for Physics, P.O.B. 49, H-1525, Budapest, Hungary
125 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...