Electron microscopy of charge density wave defects in 1T-TaS2 and 1T-TaSe2 View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1985

AUTHORS

G. Salvettil , R. Ayroles , C. Roucau , H. Mutka , P. Molinié

ABSTRACT

We have studied the charge density wave pinned by defects in the layer compounds 1T-TaS2 and 1T-TaSe2. The number of pinning defects is controlled by irradiating the samples with high energy electrons (2 MeV). Electron microscopy observations, both high resolution and dark field images, reveal the effect of pinning on the domains and the boundaries of the charge density wave. More... »

PAGES

92-95

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-13913-3_192

DOI

http://dx.doi.org/10.1007/3-540-13913-3_192

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025036073


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