Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1983

AUTHORS

J. Kinoshita , K. Inagaki , C. Yamanouchi , K. Yoshihiro , J. Moriyama , S. Kawaji

ABSTRACT

Hall and transverse resistivity measurements for Si-nMOS (100) inversion layers have been made at temperatures between 4.2 K and 12 mK and a magnetic field of 120 kOe.The result indicates that the effect of short range scatterers is still dominant at the lowest temperatures. It has been found from a detailed study of transverse resistivity around the mobility gap region that five quantized Hall resistivity plateaus, corresponding to h/ie2 for i =4, 6, 8, 12 and 16, are potentially available for the quantum standard resistor under the magnetic field of 120 kOe at 3He - 4He temperatures. More... »

PAGES

33-36

Book

TITLE

Application of High Magnetic Fields in Semiconductor Physics

ISBN

978-3-540-11996-8
978-3-540-39472-3

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-11996-5_4

DOI

http://dx.doi.org/10.1007/3-540-11996-5_4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035262116


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