Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1983

AUTHORS

H. Bender , J. Van Landuyt , S. Amelinckx , C. Claeys , G. Declerck , R. Van Overstraeten

ABSTRACT

It is demonstrated that stacking faults can nucleate and grow during the inert annealing of high interstitial oxygen containing silicon wafers. The defect density decrease can be explained by a transition model of Frank type SF's towards 1/6<114>-type SF's and further to perfect loops.

PAGES

134-139

Book

TITLE

Defect Complexes in Semiconductor Structures

ISBN

978-3-540-11986-9
978-3-540-39456-3

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/3-540-11986-8_11

DOI

http://dx.doi.org/10.1007/3-540-11986-8_11

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019005662


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