Study on Subsurface Damage Generated in Ground Si Wafer View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2007

AUTHORS

Bahman Soltani Hosseini , Libo Zhou , Tatsuya Tsuruga , Jun Shimizu , Hiroshi Eda , Sumio Kamiya , Hisao Iwase

ABSTRACT

In this paper, we study and evaluate the subsurface damage of the ground wafers to understand the effect of residual stress on the wafer deflection. The experimental results show that two indexes of depth of the damaged layer and degree of the residual stress are directly associated with the warpage of wafer. The degree of the damage decreases with an increasing in grit size of diamond wheel. The theoretical analysis suggests that the minimally achievable thickness of wafer is proportional to the degree of the damage introduced by respective process. More... »

PAGES

309-313

Book

TITLE

Towards Synthesis of Micro-/Nano-systems

ISBN

978-1-84628-558-5

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/1-84628-559-3_54

DOI

http://dx.doi.org/10.1007/1-84628-559-3_54

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039784547


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