2006
AUTHORS ABSTRACTAs a result of continual evolution of active region design, quantum cascade lasers have achieved unprecedented levels of performance for solid state sources in the 5-12µm region. QCLs also offer unique possibilities for the development of a new class of devices exploiting strong intersubband optical nonlinearities. Although the highest device performance is still obtained with the original InGaAs/AlInAs/InP materials system, QCL operation has now been demonstrated for a wide range of III-V materials, and continued optimisation of crystal growth and device design is expected to lead to significantly enhanced operation for high bandgap offset QCLs in the 3–5µm region. Although MBE growth still dominates, the emergence of MOVPE as a viable growth route for high performance QCLs offers the potential for accelerated technological exploitation of QCLs, as well as opening the field to a wider range of research groups. As QCLs enter their second decade, innovative new areas of research continue to emerge, consolidating the position of these devices at the forefront of mid-IR optoelectronic technology. More... »
PAGES323-355
Mid-infrared Semiconductor Optoelectronics
ISBN978-1-84628-208-9
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