CVD Diamond Films for SOI Technologies View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2005

AUTHORS

V. Ralchenko , T. Galkina , A. Klokov , A. Sharkov , S. Chernook , V. Martovitsky

ABSTRACT

Diamond films is an interesting material for silicon-on-insulator technologies due to a unique combination of properties that can enhance to electronic device performance. Current CVD techniques for diamond growth allow the production of diamond layers with a thickness from less than 1 micron to a few mm on Si substrates of large area. As the direct diamond-to-silicon bonding requires high temperature (>1150°C) and still is problematic, the use of a Si substrate as the device layer after diamond deposition could be an alternative. No dramatic degradation of silicon after diamond deposition at 750°C by microwave plasma assisted CVD is found as revealed from resistivity, X-ray diffraction and acoustic phonon scattering measurements. Further studies of electronic properties of the diamond-coated Si are required to evaluate the feasibility of Si-on-diamond (SOD) device fabrication. More... »

PAGES

77-84

Book

TITLE

Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

ISBN

1-4020-3011-8

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/1-4020-3013-4_7

DOI

http://dx.doi.org/10.1007/1-4020-3013-4_7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006033195


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143 https://www.grid.ac/institutes/grid.4886.2 schema:alternateName Russian Academy of Sciences
144 schema:name A.M. Prokhorov General Physics Institute RAS, Vavilov str. 38, Moscow, 119991, Russia
145 rdf:type schema:Organization
 




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