Depth-profiled Positron Annihilation Spectroscopy of Thin Insulation Films View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2002

AUTHORS

D. W. Gidley , K. G. Lynn , M. P. Petkov , M. H. Weber , J. N. Sun , A. F. Yee

ABSTRACT

The various techniques of positron annihilation spectroscopy (PAS) may be among the best for characterizing pore size, pore distribution and interconnectivity in amorphous thin films. In particular, PAS is becoming recognized as a practical characterization method for low-k dielectric films in microelectronic materials research. We expect this area of PAS research to experience a significant increase in activity in the next decade. Many obstacles to using low energy positron beams to depth profile thin film insulators with positron annihilation spectroscopies (PAS) have recently been overcome. More... »

PAGES

151-171

Book

TITLE

New Directions in Antimatter Chemistry and Physics

ISBN

0-7923-7152-6

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/0-306-47613-4_10

DOI

http://dx.doi.org/10.1007/0-306-47613-4_10

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028373762


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