Marina G Mynbaeva

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Marina G



Publications in SciGraph latest 50 shown

  • 2017-09 Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium in TECHNICAL PHYSICS LETTERS
  • 2016-01 Formation of graphite/sic structures by the thermal decomposition of silicon carbide in SEMICONDUCTORS
  • 2015-10 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2015-03 Large-area crystalline GaN slabs in TECHNICAL PHYSICS LETTERS
  • 2014-12 Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images in TECHNICAL PHYSICS LETTERS
  • 2014-11 Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate in SEMICONDUCTORS
  • 2014-03 On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum in SEMICONDUCTORS
  • 2012-09 Analysis of photoconductivity spectra with a strongly delayed photoresponse in TECHNICAL PHYSICS
  • 2012-05 Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates in TECHNICAL PHYSICS LETTERS
  • 2011-10 Photoelectric properties of porous GaN/SiC heterostructures in SEMICONDUCTORS
  • 2011-06 Fabrication of improved-quality seed crystals for growth of bulk silicon carbide in SEMICONDUCTORS
  • 2011-05 Diffusion in porous silicon carbide in PHYSICS OF THE SOLID STATE
  • 2011-05 Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation in SEMICONDUCTORS
  • 2010-10 Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates in SEMICONDUCTORS
  • 2010-01 New approach to rapid characterization of single-crystalline silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2009-08 Charge transport in 4H-SiC detector structures under conditions of a high electric field in SEMICONDUCTORS
  • 2008-09 High-temperature diffusion doping of porous silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2008-09 Optical and structural properties of SiC nanocrystals in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2007-06 TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2007-04 Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates in SEMICONDUCTORS
  • 2007-01 Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2006-12 Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2005-09 On the role of vacancies in pore formation in the course of anodizing of silicon carbide in PHYSICS OF THE SOLID STATE
  • 2004-09 Carrier drift mobility in porous silicon carbide in SEMICONDUCTORS
  • 2003-06 Magnesium outdiffusion from porous silicon carbide substrates during autodoping of gallium nitride epilayers in TECHNICAL PHYSICS LETTERS
  • 2003-05 Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC in SEMICONDUCTORS
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