Grigorii S Sokolovskii


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Person Info

NAME

Grigorii S

SURNAME

Sokolovskii

Publications in SciGraph latest 50 shown

  • 2022-10-07 Partially coherent conical refraction promises new counter-intuitive phenomena in SCIENTIFIC REPORTS
  • 2022-01 Quantum-Cascade Laser with Radiation Emission through a Textured Layer in SEMICONDUCTORS
  • 2020-11 A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2020-11 Cascaded Second Harmonic Generation with a Half-Order Periodical Orientation in OPTICS AND SPECTROSCOPY
  • 2020-08-31 Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range in TECHNICAL PHYSICS
  • 2020-08 Spectral Characteristics of Half-Ring Quantum-Cascade Lasers in OPTICS AND SPECTROSCOPY
  • 2020-05 Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode in TECHNICAL PHYSICS LETTERS
  • 2019-11 Generation of Droplet Quasi-Bessel Beams Using a Semiconductor Laser in OPTICS AND SPECTROSCOPY
  • 2019-10 Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-μm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-09 The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature in OPTICS AND SPECTROSCOPY
  • 2019-07 High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-04 Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-12 Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape in SEMICONDUCTORS
  • 2018-11-22 Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature in TECHNICAL PHYSICS
  • 2018-11-14 High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm in PHYSICS OF THE SOLID STATE
  • 2018-10-15 Lasing in 9.6-μm Quantum Cascade Lasers in TECHNICAL PHYSICS
  • 2018-10-02 3D laser nano-printing on fibre paves the way for super-focusing of multimode laser radiation in SCIENTIFIC REPORTS
  • 2018-10 Generation of Droplet Bessel Beams Using a Semiconductor Laser in TECHNICAL PHYSICS LETTERS
  • 2018-10 A Material for Difference-Frequency Generation of Terahertz Radiation in OPTICS AND SPECTROSCOPY
  • 2018-09 Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range in OPTICS AND SPECTROSCOPY
  • 2018-07-06 Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength in SEMICONDUCTORS
  • 2017-12 Generation of High-Power Ultrashort Optical Pulses Using a Semiconductor Laser with Controlled Current Pumping in TECHNICAL PHYSICS
  • 2017-12 Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots in TECHNICAL PHYSICS LETTERS
  • 2017-09-20 Photonic-crystal waveguide for the second-harmonic generation in PHYSICS OF THE SOLID STATE
  • 2017-07 Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm in TECHNICAL PHYSICS LETTERS
  • 2016-12 Generation of high-power ultrashort optical pulses by semiconductor lasers in TECHNICAL PHYSICS LETTERS
  • 2016-10 Metamaterial for efficient second harmonic generation in TECHNICAL PHYSICS LETTERS
  • 2014-06 Manipulation of microparticles using Bessel beams from semiconductor lasers in TECHNICAL PHYSICS LETTERS
  • 2013-08-07 High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz in SEMICONDUCTORS
  • 2012-07 Effect of gain saturation on the current-power characteristic of semiconductor laser in TECHNICAL PHYSICS LETTERS
  • 2012-05 Superfocusing of mutimode semiconductor lasers and light-emitting diodes in TECHNICAL PHYSICS LETTERS
  • 2010-05-28 Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2010-01 Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Generation of π modes in semiconductor vertical-cavity surface-emitting lasers in TECHNICAL PHYSICS LETTERS
  • 2008-12-23 Generation of propagation-invariant light beams from semiconductor light sources in TECHNICAL PHYSICS LETTERS
  • 2008-08-30 Switching between generation of two quantum states in quantum-well laser diodes in TECHNICAL PHYSICS LETTERS
  • 2008-03 High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm) in TECHNICAL PHYSICS LETTERS
  • 2007-04 Phase effects in broad-stripe curved-grating distributed feedback heterolasers in TECHNICAL PHYSICS LETTERS
  • 2007-02 Self-ordering of Mg and O isoelectronic impurities in ZnSe in SEMICONDUCTORS
  • 2007-01 Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states in TECHNICAL PHYSICS LETTERS
  • 2006-09 Self-assembling of zinc and tellurium impurities in zinc-blende MgS in TECHNICAL PHYSICS LETTERS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2005-10 Output radiation focusing in curved-grating distributed Bragg reflector laser in TECHNICAL PHYSICS LETTERS
  • 1999-03 High-power laser structures incorporating novel curved-gratings in OPTICAL AND QUANTUM ELECTRONICS
  • 1999-02 Bragg reflectors for cylindrical waves in SEMICONDUCTORS
  • 1998-08 Modulation of the polarization of semiconductor laser radiation at constant output power in TECHNICAL PHYSICS LETTERS
  • 1998-03 Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region in TECHNICAL PHYSICS LETTERS
  • 1997-09 Phase effects in a semiconductor laser with diffraction extraction of radiation in TECHNICAL PHYSICS LETTERS
  • 1997-05 Polarization switching time for semiconductor laser radiation in TECHNICAL PHYSICS LETTERS
  • 1997-03 Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling in TECHNICAL PHYSICS LETTERS
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