Pavel B Rodin

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Pavel B



Publications in SciGraph latest 50 shown

  • 2021-09 Wave Effects in a Coaxial Transmission Line under Subnanosecond Switching of a High-Voltage Diode in the Delayed Impact-Ionization Breakdown Mode in TECHNICAL PHYSICS LETTERS
  • 2020-03 Double Avalanche Injection in Diode Avalanche Sharpeners in SEMICONDUCTORS
  • 2019-03 Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures in SEMICONDUCTORS
  • 2018-02 Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions in TECHNICAL PHYSICS LETTERS
  • 2017-06 Subnanosecond impact-ionization switching of silicon structures without p–n junctions in TECHNICAL PHYSICS LETTERS
  • 2016-01 Parameters of silicon carbide diode avalanche shapers for the picosecond range in TECHNICAL PHYSICS LETTERS
  • 2015-04 Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching in TECHNICAL PHYSICS LETTERS
  • 2014-04 Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions in TECHNICAL PHYSICS LETTERS
  • 2012-06 Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes in TECHNICAL PHYSICS LETTERS
  • 2011-09-29 Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers in TECHNICAL PHYSICS LETTERS
  • 2009-04-15 Stabilization of complex spatio-temporal dynamics near a subcritical Hopf bifurcation by time-delayed feedback in THE EUROPEAN PHYSICAL JOURNAL B
  • 2007-02 Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold in TECHNICAL PHYSICS LETTERS
  • 2000-06 Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure in SEMICONDUCTORS
  • 2000-01 Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics in THE EUROPEAN PHYSICAL JOURNAL B
  • 1997-04 Transverse stability of an impact-ionization front in a Si p+-n-n+ structure in SEMICONDUCTORS
  • 1997-01 Current filamentation in bistable semiconductor systems with two global constraints in ZEITSCHRIFT FÜR PHYSIK B CONDENSED MATTER
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