M M Kulagina

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Publications in SciGraph latest 50 shown

  • 2018-12 Diode Lasers with Near-Surface Active Region in SEMICONDUCTORS
  • 2018-12 Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks in SEMICONDUCTORS
  • 2018-11 Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides in SEMICONDUCTORS
  • 2018-10 Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current in TECHNICAL PHYSICS LETTERS
  • 2018-08 Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot in JETP LETTERS
  • 2018-08 Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region in TECHNICAL PHYSICS LETTERS
  • 2018-07 Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope in GYROSCOPY AND NAVIGATION
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2017-11 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2017-09 Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium in TECHNICAL PHYSICS LETTERS
  • 2017-07 Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures in TECHNICAL PHYSICS
  • 2017-05 Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters in SEMICONDUCTORS
  • 2016-10 Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency in SEMICONDUCTORS
  • 2016-10 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-03 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2015-11 Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-07 The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots in TECHNICAL PHYSICS LETTERS
  • 2015-05 Thermal resistance of ultra-small-diameter disk microlasers in SEMICONDUCTORS
  • 2013-10 Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region in SEMICONDUCTORS
  • 2013-09 Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2013-07 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2012-08 High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2012-03 Double-cross epitaxial overgrowth of nonpolar gallium nitride layers in TECHNICAL PHYSICS LETTERS
  • 2011-12 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2011-10 Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures in SEMICONDUCTORS
  • 2011-06 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2010-05 Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates in SEMICONDUCTORS
  • 2010-02 Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping in SEMICONDUCTORS
  • 2009-11 Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs in SEMICONDUCTORS
  • 2008-10 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-03 Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures in SEMICONDUCTORS
  • 2005-07 High-power flip-chip blue light-emitting diodes based on AlGaInN in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-05 Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells in SEMICONDUCTORS
  • 2003-10 Effect of oxidation on the electrical properties of granular copper nanostructures in PHYSICS OF THE SOLID STATE
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2001-07 The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering in TECHNICAL PHYSICS
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