Peter Werner

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Publications in SciGraph latest 50 shown

  • 2018-12 Pressure-induced superconductivity and topological quantum phase transitions in a quasi-one-dimensional topological insulator: Bi4I4 in NPJ QUANTUM MATERIALS
  • 2018-12 Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures in NATURE COMMUNICATIONS
  • 2018-09 Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire in NANO RESEARCH
  • 2017-08 Magnetic antiskyrmions above room temperature in tetragonal Heusler materials in NATURE
  • 2016-09 Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications in SCIENTIFIC REPORTS
  • 2016-03-14 Superconductivity in Weyl semimetal candidate MoTe2 in NATURE COMMUNICATIONS
  • 2015-12 SnSi nanocrystals of zinc-blende structure in a Si matrix in NANO RESEARCH
  • 2014-09 Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair in SEMICONDUCTORS
  • 2014-07 A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2013-12 Lateral photoconductivity in structures with Ge/Si quantum dots in SEMICONDUCTORS
  • 2013-11 Pseudomorphic GeSn/Ge (001) heterostructures in SEMICONDUCTORS
  • 2013-10 Composite system based on CdSe/ZnS quantum dots and GaAs nanowires in SEMICONDUCTORS
  • 2013-09 Ellipsometry studies of Si/Ge superlattices with embedded Ge dots in APPLIED PHYSICS A
  • 2013-09 Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment in APPLIED PHYSICS A
  • 2013-05 Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells in SEMICONDUCTORS
  • 2012-12 Photoinduced and equilibrium optical absorption in Ge/Si quantum dots in SEMICONDUCTORS
  • 2012-11 Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands in SEMICONDUCTORS
  • 2012-11 Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix in SEMICONDUCTORS
  • 2011-04 Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces in SEMICONDUCTORS
  • 2010-08 InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics in SEMICONDUCTORS
  • 2010-02 Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate in NANOSCALE RESEARCH LETTERS
  • 2010-01 A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping in NANOSCALE RESEARCH LETTERS
  • 2009-03 Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature in SEMICONDUCTORS
  • 2008 Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er in MICROSCOPY OF SEMICONDUCTING MATERIALS 2007
  • 2007-09 Submonolayer Quantum Dots for High Speed Surface Emitting Lasers in NANOSCALE RESEARCH LETTERS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2007-02 Resonances related to an array of InAs quantum dots and controlled by an external electric field in SEMICONDUCTORS
  • 2006-11-27 Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices in NANOSCALE RESEARCH LETTERS
  • 2006-05 The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2006-02 The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots in SEMICONDUCTORS
  • 2005-05 Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb in SEMICONDUCTORS
  • 2005-01 Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2005 TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers in MICROSCOPY OF SEMICONDUCTING MATERIALS
  • 2005-01 Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots in PHYSICS OF THE SOLID STATE
  • 2004-11 Peculiarities in the morphology of ge island array on Si(100) at a subcritical thickness of the deposited Ge layer in TECHNICAL PHYSICS LETTERS
  • 2004-10 Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100) in SEMICONDUCTORS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-06 Spectroscopy of exciton states of InAs quantum molecules in SEMICONDUCTORS
  • 2004-01 Si/Ge nanostructures for optoelectronics applications in PHYSICS OF THE SOLID STATE
  • 2003-12 Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature in SEMICONDUCTORS
  • 2003-09 The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-09 Temperature variation of the morphology of nanocluster ensembles in the Ge/Si(100) system in TECHNICAL PHYSICS LETTERS
  • 2003-02 Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix in SEMICONDUCTORS
  • 2003 Si/Ge Nanostructures For Led in TOWARDS THE FIRST SILICON LASER
  • 2002-11 Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy in SEMICONDUCTORS
  • 2002-11 Long-wavelength quantum-dot lasers in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2001-01 Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix in TECHNICAL PHYSICS LETTERS
  • 2000-07 Study of multilayer structures with InAs nanoobjects in a silicon matrix in SEMICONDUCTORS
  • 1999-11 Effect of growth conditions on InAs nanoislands formation on Si(100) surface in CZECHOSLOVAK JOURNAL OF PHYSICS
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