Harri K Lipsanen

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Harri K



Publications in SciGraph latest 50 shown

  • 2020-11-07 Fabrication-friendly polarization-sensitive plasmonic grating for optimal surface-enhanced Raman spectroscopy in JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS
  • 2020-06 Review of fabrication methods of large-area transparent graphene electrodes for industry in FRONTIERS OF OPTOELECTRONICS
  • 2020-02 Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region in TECHNICAL PHYSICS LETTERS
  • 2019-02-12 Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide in NANOSCALE RESEARCH LETTERS
  • 2019-01-25 Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides in NATURE COMMUNICATIONS
  • 2019-01 Determination of Young’s Modulus of Wurtzite III–V Nanowires by the Methods of Scanning Probe Microscopy in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2018-04-23 III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs in SCIENTIFIC REPORTS
  • 2018-01 Lifetimes of the Vibrational States of DNA Molecules in Functionalized Complexes of Semiconductor Quantum Dots in TECHNICAL PHYSICS LETTERS
  • 2018-01 Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires in SEMICONDUCTORS
  • 2017-12-19 Measurement of Nanowire Optical Modes Using Cross-Polarization Microscopy in SCIENTIFIC REPORTS
  • 2017-10-12 Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers in NATURE COMMUNICATIONS
  • 2017-09-12 Versatile Water-Based Transfer of Large-Area Graphene Films onto Flexible Substrates in MRS ADVANCES
  • 2017-06-05 Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy in NATURE COMMUNICATIONS
  • 2017-03-14 Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties in NANO RESEARCH
  • 2017-02-10 Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K in SEMICONDUCTORS
  • 2016-12 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN in SEMICONDUCTORS
  • 2016-12 Resonant features of the terahertz generation in semiconductor nanowires in SEMICONDUCTORS
  • 2016-11-10 Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires in NATURE COMMUNICATIONS
  • 2016-05-13 Pyrolytic carbon coated black silicon in SCIENTIFIC REPORTS
  • 2015-11-15 The effect of resonant Mie absorption under THz radiation emission in semiconductor nanowires in OPTICS AND SPECTROSCOPY
  • 2015-10-30 Polarization and Thickness Dependent Absorption Properties of Black Phosphorus: New Saturable Absorber for Ultrafast Pulse Generation in SCIENTIFIC REPORTS
  • 2015-05-19 Investigation of Second- and Third-Harmonic Generation in Few-Layer Gallium Selenide by Multiphoton Microscopy in SCIENTIFIC REPORTS
  • 2015-02 Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals in TECHNICAL PHYSICS LETTERS
  • 2014-11-06 Functionalization of nc-Si/SiO2 semiconductor quantum dots by oligonucleotides in SEMICONDUCTORS
  • 2014-11 Resonant raman scattering in complexes of nc-Si/SiO2 quantum dots and oligonucleotides in TECHNICAL PHYSICS LETTERS
  • 2014-06-17 High-resolution Raman scattering in oligonucleotides in PHYSICS OF THE SOLID STATE
  • 2014-06-15 Detection of high-resolution Raman spectra in short oligonucleotides in JETP LETTERS
  • 2014-04 High-resolution Raman scattering in oligonucleotides in TECHNICAL PHYSICS LETTERS
  • 2014-03-12 Low-height sharp edged patterns for capillary self-alignment assisted hybrid microassembly in JOURNAL OF MICRO-BIO ROBOTICS
  • 2014-01-27 Leakage currents of large area InP/InGaAs heterostructures in MRS ADVANCES
  • 2013-11-06 New method of determining the young’s Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope in PHYSICS OF THE SOLID STATE
  • 2012-07-30 Growth of CVD graphene on copper by rapid thermal processing in MRS ADVANCES
  • 2012-02-17 Formation of (Ga,Mn)As nanowires and study of their magnetic properties in SEMICONDUCTORS
  • 2010-01 Emission of terahertz radiation from GaN under impact ionization of donors in an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-06-28 In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2005-07 Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2003-05 Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2003-05 Growth of GaAs on polycrystalline silicon-on-insulator in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2003-05 Misfit dislocations in GaAsN/GaAs interface in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2003-05 Optical waveguides on polysilicon-on-insulator in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2003-05 In(Ga)As quantum dots on Ge substrate in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 1997-02 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits in IL NUOVO CIMENTO D
  • 1996 Carrier Relaxation Dynamics in Strain-Induced InGaAs Quantum Dots in ULTRAFAST PHENOMENA X
  • 1995-11 Recombination processes in strain-induced InGaAs quantum dots in IL NUOVO CIMENTO D
  • 1995-11 Growth of high-quality GaSb by metalorganic vapor phase epitaxy in JOURNAL OF ELECTRONIC MATERIALS
  • 1994-05 Growth and characterization of a GaAs/AlAs superlattice with variable layer thicknesses in JOURNAL OF ELECTRONIC MATERIALS
  • 1993 Praseodymium Dioxide Doping of In1−xGaxAsyP1−y Epilayer Grown with Liquid Phase Epitaxy in MRS ADVANCES
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