Gerhard Müller

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Publications in SciGraph latest 50 shown

  • 2014 Group III-Nitride Chemical Nanosensors with Optical Readout in GAS SENSING FUNDAMENTALS
  • 2010 Chemical Contamination Sensor for Phosphate Ester Hydraulic Fluids in INTERNATIONAL JOURNAL OF AEROSPACE ENGINEERING
  • 2009-03 Hydrocarbon detection using laser ion mobility spectrometry in INTERNATIONAL JOURNAL FOR ION MOBILITY SPECTROMETRY
  • 2009 On the Low-Temperature Response of Semiconductor Gas Sensors in JOURNAL OF SENSORS
  • 2008-08-24 Micro-Fabrication of Gas Sensors in SOLID STATE GAS SENSING
  • 2003 Temperature- and Field-Effect-Modulation Techniques for Thin-Film Metal Oxide Gas Sensors in ADVANCED GAS SENSING - THE ELECTROADSORPTIVE EFFECT AND RELATED TECHNIQUES
  • 2001 Group III-Nitride based Gas Sensors for Exhaust Gas Monitoring in TRANSDUCERS ’01 EUROSENSORS XV
  • 2001 Hydrocarbon Detection using MOS Capacitors in a Temperature-Pulsed Mode in TRANSDUCERS ’01 EUROSENSORS XV
  • 1997-08 Silicon hotplates for metal oxide gas sensor elements in MICROSYSTEM TECHNOLOGIES
  • 1995-08 Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films in APPLIED PHYSICS A
  • 1992-01 Defects and impurities in amorphous semiconductors and in liquid electrolytes in APPLIED PHYSICS A
  • 1991-09 Accumulation and annealing of implantation damage in a-Si:H in APPLIED PHYSICS A
  • 1991-05 Autocompensation doping in light-soaked and in radiation-damaged a-Si:H in APPLIED PHYSICS A
  • 1989-08 The effect of H-dilution on the transport properties of doped a-Si1−xGex: H alloys in APPLIED PHYSICS A
  • 1988-08 Equilibrium dangling bond densities and its related thin-film alloys in APPLIED PHYSICS A
  • 1988-01 On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon in APPLIED PHYSICS A
  • 1986-12 Doping efficiencies of gas-phase and ion-implantation doped a-Si:H in APPLIED PHYSICS A
  • 1986-04 A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon in APPLIED PHYSICS A
  • 1982-10 The electrical performance of thinn+-window layers ina-Si: H solar cells in APPLIED PHYSICS A
  • 1982 Charge Collection in a-Si:H Solar Cells in FOURTH E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE
  • 1982 Highly Conductive Boron Doped Si-Layers Prepared by Plasma Decomposition of SiH4 in FOURTH E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE
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