Vadim G Talalaev


Ontology type: schema:Person     


Person Info

NAME

Vadim G

SURNAME

Talalaev

Publications in SciGraph latest 50 shown

  • 2019-04-04 Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk in SCIENTIFIC REPORTS
  • 2019-03 Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films in PHYSICS OF THE SOLID STATE
  • 2017-09 Directional emission from beryllium doped GaAs/AlGaAs nanowires in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Temperature quenching of spontaneous emission in tunnel-injection nanostructures in SEMICONDUCTORS
  • 2014-08-31 Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair in SEMICONDUCTORS
  • 2014-07 A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2013-11-06 Pseudomorphic GeSn/Ge (001) heterostructures in SEMICONDUCTORS
  • 2013-10-12 Composite system based on CdSe/ZnS quantum dots and GaAs nanowires in SEMICONDUCTORS
  • 2013-05-29 Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment in APPLIED PHYSICS A
  • 2012-11-07 Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix in SEMICONDUCTORS
  • 2010-08-18 InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics in SEMICONDUCTORS
  • 2008-09-10 Baric properties of InAs quantum dots in SEMICONDUCTORS
  • 2007-06 Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots in PHYSICS OF THE SOLID STATE
  • 2007-02 Resonances related to an array of InAs quantum dots and controlled by an external electric field in SEMICONDUCTORS
  • 2006-08-01 Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices in NANOSCALE RESEARCH LETTERS
  • 2006-05 The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2006-02 The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots in SEMICONDUCTORS
  • 2005-03-02 Electrical behavior of size-controlled Si nanocrystals arranged as single layers in APPLIED PHYSICS A
  • 2004-06 Spectroscopy of exciton states of InAs quantum molecules in SEMICONDUCTORS
  • 2004-05-01 Electronic structure and dynamics of optically excited single-wall carbon nanotubes in APPLIED PHYSICS A
  • 2004-01 Si/Ge nanostructures for optoelectronics applications in PHYSICS OF THE SOLID STATE
  • 2003-12 Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature in SEMICONDUCTORS
  • 2003-09 The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003 Si/Ge Nanostructures For Led in TOWARDS THE FIRST SILICON LASER
  • 2000-04 Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces in SEMICONDUCTORS
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