I L Krestnikov


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Person Info

NAME

I L

SURNAME

Krestnikov

Publications in SciGraph latest 50 shown

  • 2013-03 Gigahertz repetition rate mode-locked Yb:KYW laser using self-assembled quantum dot saturable absorber in APPLIED PHYSICS B
  • 2012-04 High peak power and sub-picosecond Fourier-limited pulse generation from passively mode-locked monolithic two-section gain-guided tapered InGaAs quantum-dot lasers in LASER PHYSICS
  • 2011-06 High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers in APPLIED PHYSICS B
  • 2011-04 Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode in APPLIED PHYSICS B
  • 2008-12 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-12 Modelocked quantum dot vertical external cavity surface emitting laser in APPLIED PHYSICS B
  • 2008-09 A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges in APPLIED PHYSICS B
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001-03 InGaAs nanodomains formed in situ on the surface of (Al,Ga)As in TECHNICAL PHYSICS LETTERS
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-05 InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
  • 1999-05 Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm in SEMICONDUCTORS
  • 1998-02 RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1997-08 Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells in SEMICONDUCTORS
  • 1997-08 Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure in TECHNICAL PHYSICS LETTERS
  • 1997-04 Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1997-02 Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures in SEMICONDUCTORS
  • 1997-02 Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W in TECHNICAL PHYSICS LETTERS
  • 1997-01 Photoluminescence of InSb quantum dots in GaAs and GaSb matrices in SEMICONDUCTORS
  • 1997-01 Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement in TECHNICAL PHYSICS LETTERS
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