Yu B Samsonenko


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Person Info

NAME

Yu B

SURNAME

Samsonenko

Publications in SciGraph latest 50 shown

  • 2019-08 The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires in TECHNICAL PHYSICS LETTERS
  • 2018-12 Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate in SEMICONDUCTORS
  • 2018-10-18 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon in SEMICONDUCTORS
  • 2018-04-03 Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources in SEMICONDUCTORS
  • 2018-01 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases in SEMICONDUCTORS
  • 2017-09 Directional emission from beryllium doped GaAs/AlGaAs nanowires in TECHNICAL PHYSICS LETTERS
  • 2016-12 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN in SEMICONDUCTORS
  • 2016-11-06 Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon in SEMICONDUCTORS
  • 2016-09-17 The effect of a gas environment on the fluorescence intensity of quantum-dot composite systems in OPTICS AND SPECTROSCOPY
  • 2016-05-21 Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy in OPTICS AND SPECTROSCOPY
  • 2016-05-15 Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range in SEMICONDUCTORS
  • 2015-09 Generation of terahertz radiation by AlGaAs nanowires in JETP LETTERS
  • 2015-05 Photoelectric properties of an array of axial GaAs/AlGaAs nanowires in TECHNICAL PHYSICS LETTERS
  • 2014-07 A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 Study of the electrical properties of individual (Ga,Mn)As nanowires in SEMICONDUCTORS
  • 2013-10-12 Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals in SEMICONDUCTORS
  • 2013-08-07 (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties in SEMICONDUCTORS
  • 2013-07 Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2013-06-16 Computer simulation of the structure and raman spectra of GaAs polytypes in PHYSICS OF THE SOLID STATE
  • 2013-06-10 Photovoltaic properties of GaAs:Be nanowire arrays in SEMICONDUCTORS
  • 2013-04-17 Growth specifics of GaAs nanowires in mesa in PHYSICS OF THE SOLID STATE
  • 2012-11-07 Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix in SEMICONDUCTORS
  • 2012-09 Photoluminescence of single quantum wires and quantum dots in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-05 Studying the formation of self-assembled (In,Mn)As quantum dots in TECHNICAL PHYSICS LETTERS
  • 2011-08-18 Piezoelectric effect in GaAs nanowires in SEMICONDUCTORS
  • 2011-08-18 Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties in SEMICONDUCTORS
  • 2011-07-10 Specific features of Raman spectra of III–V nanowhiskers in PHYSICS OF THE SOLID STATE
  • 2011-06-18 Fabrication of ordered GaAs nanowhiskers using electron-beam lithography in SEMICONDUCTORS
  • 2011-04-16 Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces in SEMICONDUCTORS
  • 2010-08-18 InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics in SEMICONDUCTORS
  • 2010-05-09 Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer in SEMICONDUCTORS
  • 2010-01-26 The initial stage of growth of crystalline nanowhiskers in SEMICONDUCTORS
  • 2009-11-14 Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate in NANOSCALE RESEARCH LETTERS
  • 2009-04-30 On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces in TECHNICAL PHYSICS
  • 2008-12-17 Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces in SEMICONDUCTORS
  • 2008-11 Deposition-rate dependence of the height of GaAs-nanowires in SEMICONDUCTORS
  • 2008-06 Hexagonal structures in GaAs nanowhiskers in TECHNICAL PHYSICS LETTERS
  • 2007-11 Interaction of optical radiation with GaAs nanowhisker arrays in TECHNICAL PHYSICS LETTERS
  • 2007-08 Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2006-05 The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2006-02 Erratum: “Atomic structure of MBE-grown GaAs nanowhiskers” [Phys. Solid State 47, 2213 (2005)] in PHYSICS OF THE SOLID STATE
  • 2006-01 A3B5 nanowhiskers: MBE growth and properties in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 2005-12 Atomic structure of MBE-grown GaAs nanowhiskers in PHYSICS OF THE SOLID STATE
  • 2005-09 The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates in SEMICONDUCTORS
  • 2005-07 The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system in SEMICONDUCTORS
  • 2005-05 The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy in SEMICONDUCTORS
  • 2005-01 Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2005-01 Localization of holes in an InAs/GaAs quantum-dot molecule in SEMICONDUCTORS
  • 2004-10 Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique in SEMICONDUCTORS
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