V V Zuev

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Publications in SciGraph latest 50 shown

  • 2017-09 Influence of hydrogen on the thermoelectric voltage signal in a Pt/WOx/6H-SiC/Ni/Pt layered structure in TECHNICAL PHYSICS LETTERS
  • 2016-05 Tungsten-oxide thin films for a high-temperature semiconductor hydrogen detector based on a 6H-SiC crystal in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2015-09 Execution of energy efficient detection of hydrogen using Pt/WOx/SiC semiconductor structure in TECHNICAL PHYSICS LETTERS
  • 2015-09 Effect of hydrogen on the electrical characteristics of structural elements of the Pt/WOx/6H-SiC in SEMICONDUCTORS
  • 2014-05 On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition in SEMICONDUCTORS
  • 2013-09 A high-temperature hydrogen detector with Pt/Pt+/n-6H-SiC structure in TECHNICAL PHYSICS LETTERS
  • 2013-07 Effect of hydrogen on the electrical properties of a Ag/WOx/W thin-film structure exhibiting resistive switching behavior in NANOTECHNOLOGIES IN RUSSIA
  • 2012-05 Functional micro- and nanostructured layers based on tungsten oxide for high-temperature hydrogen detectors on the “Pt-metal oxide-SiC” platform in NANOTECHNOLOGIES IN RUSSIA
  • 2012-03 Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors in SEMICONDUCTORS
  • 2011-05 Ion implantation of platinum from pulsed laser plasma for fabrication of a hydrogen detector based on an n-6H-SiC crystal in SEMICONDUCTORS
  • 2010-09 Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal in SEMICONDUCTORS
  • 2010-04 Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/n-6H-SiC thin-film structure in SEMICONDUCTORS
  • 2009-07 Establishment of specific features of electron localization at U− centers in semiconductors from thermally stimulated currents in SEMICONDUCTORS
  • 2008-10 Specific features of the generation-recombination properties of bistable defects in semiconductors: Manifestation in Hoffmann’s function in SEMICONDUCTORS
  • 2008-04 Determination of the energy and concentration of amphoteric defects by differential processing of the temperature dependence of the concentration of free charge carriers in SEMICONDUCTORS
  • 2008-03 Features of manifestation of acceptor state of gold in silicon with quenched-in donors in SEMICONDUCTORS
  • 2008-02 Bistable amphoteric centers in semiconductors in SEMICONDUCTORS
  • 2007-05 Bistable amphoteric centers with reverse order of electron levels in semiconductors in SEMICONDUCTORS
  • 2007-03 The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur in SEMICONDUCTORS
  • 2004-07 Evaluation of Impurity Concentration in Semiconductors from the Relaxation of Thermally Stimulated Currents in INORGANIC MATERIALS
  • 2003-11 Changes in the state of impurities and the corresponding force fields in silicon after high-temperature cyclic annealings in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2003-09 High-Temperature Zinc Doping of Silicon from Zinc-Containing SiO2 Films in INORGANIC MATERIALS
  • 2003-03 Nonuniform Impurity and Electric-Field Distributions in High-Resistivity Si〈W,Au〉, Bi12GeO20, and CdS Crystals in INORGANIC MATERIALS
  • 2002-08 Thermally Stimulated Currents in Semiconductors: Analysis of Rate Equations for a Single-Level Model and Thermally Stimulated Currents in Si<P,Au> in INORGANIC MATERIALS
  • 2002-07 Effect of long-term annealing on accumulation of impurities in SEMICONDUCTORS
  • 2002-06 Effect of Preannealing on Substitutional Gold Concentration in Silicon in INORGANIC MATERIALS
  • 2001-09 Thermally Stimulated Currents in Si〈P,Au〉: Exponential Heating Profile in INORGANIC MATERIALS
  • 2001-09 Thermally Stimulated Currents in Si〈P,Au〉: Analysis of Rate Equations in INORGANIC MATERIALS
  • 2001-07 Effect of Long-Term Heat Treatment on the Acceptor Behavior of Gold in Silicon in INORGANIC MATERIALS
  • 2001-03 Analysis of Differential Equations of Thermally Stimulated Currents in Semiconductors: Arbitrary Heating Profile in INORGANIC MATERIALS
  • 2000-08 Effect of tungsten coating on the relaxation time of photoconductivity in annealed Czochralski-Grown Si in INORGANIC MATERIALS
  • 2000-01 Investigation of thin-film samples by the method of photothermal reflection with harmonic excitation, using the heterodyning of exciting and sampling radiation in TECHNICAL PHYSICS LETTERS
  • 1999-04 Determination of the recombination parameters of a semiconducting material by the Prony method in TECHNICAL PHYSICS
  • 1998-09 Measurement of the thermal and electronic parameters of semiconductors by the “mirage-effect” method with pulsed excitation and splitting of the probe beam in TECHNICAL PHYSICS LETTERS
  • 1996-05 Effect of tungsten film on electro-physical properties of silicon after annealing at 1100°C in RUSSIAN PHYSICS JOURNAL
  • 1992 Influence of Carrier Recombination on the Pulsed Photothermal Beam Deflection Signal in Semiconductors in PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA III
  • 1992 Application of the Photothermal Beam Deflection Technique to the Measurement of Si Thermal and Electronic Parameters in PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA III
  • 1992 Theory of Pulsed Photothermal Beam Deflection Signal Formation in Semiconductors in PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA III
  • 1991-07 Distinctive features of thermal ionization of negative-U centers in a semiconductor in SOVIET PHYSICS JOURNAL
  • 1991-01 Influence of nonequilibrium charge carrier recombination on the signal shape and magnitude in the photodeflection spectroscopy method under pulse excitation in SOVIET PHYSICS JOURNAL
  • 1986-07 Impurity recombination of hot current carriers with the participation of optical phonons in SOVIET PHYSICS JOURNAL
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